Lateral microwave transformers and inductors implemented in a Si/SiGe HBT process (original) (raw)

1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999

Abstract

Experimental results are presented on a set of microwave inductors and transformers fabricated in a lateral spiral design utilizing two metal layers rather than a single metal layer as used in conventional planar magnetic devices. The fabrication process utilizes a production Si-SiGe HBT technology with standard metallization and a thick polyimide dielectric. Inductors with peak Q's between 2.6-5 and inductance

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