Current Status of Millimeter-Wave Transistor Technology (original) (raw)

InP based HBT millimeter-wave technology and circuit performance to 40 GHz

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers, 1993

We report the first InP based HBT millimeter-wave amplifiers and oscillators designed in a microstrip environment and working up to 40 GHz. A 20-40 GHz balanced high intercept amplifier and a 30 GHz VCO have been successfully fabricated and tested. These circuits benchmark the first Inp HBT microstrip designs at Ka-band frequencies.

Millimeter wave InP HEMT technology: Performance and applications

Solid-state Electronics, 1995

This paper describes the performance, reliability, and applications of a new millimeterwave technology: the indium phosphide high electron mobility transistor (InP HEMT). This advanced technology is potentially an enabling technology for a wide range of millimeterwave systems.

35nm InP HEMT for Millimeter and SubMillimeter Wave Applications

2007

A new InP HEMT process has been developed with 35nm gate length and improved Ohmic contact. A gate-source capacitance of 0.4pF/mm is achieved with the reduced gate length, a 30% improvement over our baseline 70nm device. The contact resistance is successfully reduced to 0.07 with the newly designed contact layer combined with an alloyed Au/Ge/Ni/Au Ohmic metal. Good device characteristics has been demonstrated with a transconductance as high as 2 S/mm and a cutoff frequency fr of 420GHz. A single-stage common-source amplifier was fabricated with this new process. A peak gain of 5dB is measured at 265GHz. A MAG/MSG of 3dB at 300GHz was achieved, making the device suitable for applications at frequencies well into the millimeter-wave and even sub-millimeter-wave band.

SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems

IEEE Journal of Microwaves, 2021

This paper gives an overall picture from BiCMOS technologies up to THz systems integration, which were developed in the European Research project TARANTO. The European high performance BiCMOS technology platforms are presented, which have special advantages for addressing applications in the submillimeter-wave and THz range. The status of the technology process is reviewed and the integration challenges are examined. A detailed discussion on millimeter-wave characterization and modeling is given with emphasis on harmonic distortion analysis, power and noise figure measurements up to 190 GHz and 325 GHz respectively and S-parameter measurements up to 500 GHz. The results of electrical compact models of active (HBTs) and passive components are presented together with benchmark circuit blocks for model verification. BiCMOS-enabled systems and applications with focus on future wireless communication systems and high-speed optical transmission systems up to resulting net data rates of 1.55 Tbit/s are presented. INDEX TERMS Heterojunction bipolar transistors (HBTs), high-frequency measurements, millimeter wave, SiGe, technologies, terahertz, modeling, wireless communication systems, high-speed optical transmission system.

InP-based HEMTs for the realization of ultra-high efficiency millimeter wave power amplifiers

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1993

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InP HBTs for THz frequency integrated circuits

2011

A 0.25μm InP DHBT process has been developed for THz frequency integrated circuits. A 0.25×4μm2 HBT exhibits an extrapolated ft/fmax of 430GHz/1.03THz at IC=11mA, VCE=1.8V. The transistors achieve this performance while maintaining a common-emitter breakdown voltage (BVCEO)>;4V. Thin-film interconnects and backside wafer processes have been developed to support selected IC demonstrations. The technology has been used to build fundamental oscillators, amplifiers and dynamic frequency dividers all operating at >;300GHz. Additionally, increasingly complex circuits such as a full PLL have been demonstrated.

InP HBT Technologies for THz Integrated Circuits

Proceedings of the IEEE, 2017

A 0.25m InP DHBT process has been developed for THz frequency integrated circuits. A 0.25x4m 2 HBT exhibits an extrapolated f t /f max of 430GHz/1.03THz at I C =11mA, V CE = 1.8V. The transistors achieve this performance while maintaining a common-emitter breakdown voltage (BV CEO) >4V. Thin-film interconnects and backside wafer processes have been developed to support selected IC demonstrations. The technology has been used to build fundamental oscillators, amplifiers and dynamic frequency dividers all operating at >300GHz. Additionally, increasingly complex circuits such as a full PLL have been demonstrated.