B diffusion and clustering in ion implanted Si: The role of B cluster precursors (original) (raw)

A comprehensive model for B implantation, diffusion, and clustering in silicon (Si) is outlined, employing a Monte Carlo atomistic simulator to explain B behavior under various conditions. The model accounts for the formation of immobile precursors of B clusters during the early stages of annealing, influencing both junction depth and doping levels through the creation of B-rich clusters. This investigation addresses transient enhanced diffusion (TED) phenomena and highlights the interactions and energy barriers relevant to B and Si interstitials.