Preparation and Properties of CuInS2 Thin Films Produced by the Reactive Sputtering Method (original) (raw)
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Preparation and Properties of CuInS2 Thin Films by Electrodeposition and Sulfurization
Monteiro/EPD, 2012
A thin film of chalcopyrite CuInS 2 has been formed by sulfurization of a layered metallic precursor at 550°C in argon containing H2S. The Cu/In ratio of the film is ranged from 0,8 to 1.85. The resistivity of the film decreases by aging in air and then increases by annealing in vacuum or in air. The former effect can be attributed to gas absorption in the film which gives rise to an increase in the hole mobility, while the latter gives rise to gas desorption. The hole concentration of the films is of the order of 102o cm-3 and is almost independent of aging. Electrical conduction in the thin film is discussed in terms of hole transport crossing over an intergranular potential barrier in the polycrystalline film.
Preparation and properties of CuInS 2 thin film prepared from electroplated precursor
Solar Energy, 2006
A thin film of chalcopyrite CuInS 2 has been formed by sulfurization of a layered metallic precursor at 550°C in argon containing H2S. The Cu/In ratio of the film is ranged from 0,8 to 1.85. The resistivity of the film decreases by aging in air and then increases by annealing in vacuum or in air. The former effect can be attributed to gas absorption in the film which gives rise to an increase in the hole mobility, while the latter gives rise to gas desorption. The hole concentration of the films is of the order of 102o cm -3 and is almost independent of aging. Electrical conduction in the thin film is discussed in terms of hole transport crossing over an intergranular potential barrier in the polycrystalline film.
Direct preparation of crystalline CuInS2 thin films by radiofrequency sputtering
Materials Science and Engineering: B, 2009
Crystalline chalcopyrite CuInS 2 thin films were obtained by r.f. sputtering at room temperature using a crystalline CuInS 2 target and without any subsequent toxic gas, chemical or heat treatment. A systematic study of phase formation by X-ray diffraction and Raman spectroscopy and of morphology by scanning electron microscopy and atomic force microscopy was performed as function of relevant sputtering parameters: argon pressure, r.f. power and time of deposition. XRD studies show that films are amorphous until a critical thickness is reached, where they transform into crystalline chalcopyrite films with preferential (1 1 2) orientation and average grain size of 25-100 nm. At low deposition rates, smooth films were obtained, whereas at high deposition rates, films are covered with surface particles. Films were p-type conducting with bulk carrier density about 10 18 /cm 3 , determined by Hall effect measurements.
Effect of an initially sulphur-rich sprayed solution on CuInS2 thin films
Thin Solid Films, 1999
Copper indium disulphide CuInS 2 thin ®lms were prepared by spray pyrolysis technique. Improvement of CuInS 2 ®lms stoichiometry was found by increasing the sulphur content in the sprayed solution. X-ray diffraction, transmission and electrical resistivity results are discussed as a function of the ®lm composition. The ®lms were single-phase and showed a preferred orientation (112), with chalcopyrite characteristic peak (103) for high sulphur content. P-type CuInS 2 with a conductivity value in the range 10 21 ±10 23 V 21 cm 21 and a gap energy of about 1.4 eV were obtained.
Growth and properties of CuInS2 thin films
Bulletin of Materials Science, 1998
Single phase copper indium disulphide (CuInS2) thin films of thickness between 60 nm and 650 nm with the chalcopyrite structure are obtained on NaCI and glass substrates by flash evaporation. The films were found to be n-type semiconducting. The influence of the substrate temperature on the crystallinity, conductivity, activation energy and optical band gap was studied. An improvement in the film properties could be achieved up to a substrate temperature of 523 K at a molybdenum source temperature of 1873 K.
Characteristics Of Nanostructured CuInS2 Thin Film By Spray Pyrolysis Method
2015
CuInS2 is a chalcogenide ternary semiconductor, an efficient absorber material for solar cell application. In the present work, CuInS2 thin film (Cu/In=0.5) have deposited on pre-heated glass substrate at a growth temperature of 350 ̊C by cost-effective spray pyrolysis technique. The as-deposited film was annealed in vacuum at 200 ̊C for 1 hour. The effect of vacuum annealing on structural, optical and electrical properties of CIS thin has been investigated. Chalcopyrite structure of CIS film was confirmed by XRD analysis. Nonstoichiometric behaviour was observed by EDAX measurement demonstrating the presence of additional phases in CIS film. The absorption co-efficient of the sprayed CuInS2 film was found to be in the order of 10 4 cm -1 and the optical bandgap varies from 1.47 eV to 1.51 eV for as-deposited and annealed film respectively. Photoluminescence analysis reveals that the emission was mainly due to donor-acceptor pair transitions. The resistivity of CIS film varies exten...
Characterization of sprayed CuInS2 films annealed in hydrogen sulfide atmosphere
Thin Solid Films, 2006
The effect of post-deposition annealing in flowing H 2 S atmosphere at 530 -C on the properties of sprayed CuInS 2 (CIS) thin films was studied. The structure and composition were characterized by XRD, SEM and EDX. The density of carriers was obtained from C -V measurements of CIS/ Al Schottky barriers at room temperature (RT), the resistivity was measured at RT and as a function of temperature. H 2 S annealing eliminates the deficiency of sulfur and results in closely stoichiometric, well-crystallized films of CuInS 2 . Annealed films are consisting of grains with a size up to 300 nm. By treatment, the optical band gap increases from 1.44 to 1.49 eV as determined from absorbance spectra. The electrical properties are depending on the cooling rates. The specific resistivity of 10 7 and 10 5 V cm and carrier concentrations in the order of 10 14 and 10 17 cm À 3 are characteristics of rapidly and slowly cooled films, respectively. Pronounced parabolic behaviour of the lnr vs. 1/T plot of rapidly cooled samples shows that grain boundaries effect should be considered in the conductivity mechanism. Slow cooling favours the removal of a resistive phase from the grain boundaries and the film conductivity increases. The different predominating defects are assumed to be present in the rapidly and slowly cooled films. The conductivity thermal activation energies of 80 and 160 meV are characteristic of slowly cooled samples deposited from ''stoichiometric'' or ''Cu-rich'' solutions, respectively. It shows that not only the treatment conditions but also the film deposition parameters are highly important in the development of the material properties.
Thin Solid Films, 2011
CuInS 2 thin films were deposited by chemical spray of aqueous solutions containing CuCl 2 , InCl 3 and thiourea at substrate temperature of 250°C in air and subjected to annealing at 530°C in H 2 S atmosphere. Structure and composition before and after annealing were studied by XRD, EDS, XPS and Raman spectroscopy. Assprayed films were low-crystalline, showed uniform distribution of elements in film thickness and no oxygen content. For the CuInS 2 films deposited from the solutions with [Cu 2+ ] / [In 3+ ] = 1.0 and 1.1, H 2 S treatment for 30 min increased the chalcopyrite content up to 73% and 51%, respectively. Cu X S phase in sprayed CIS films promotes the crystallite growth but retards the formation of chalcopyrite phase during H 2 S treatment.
Influence of deposition temperature on the properties of sprayed CuInS 2 thin films
Journal of Materials …
Copper indium disulfide films were deposited by chemical spray pyrolysis technique at different deposition temperatures. Deposition temperature was explored to understand how it affects the crystallography, stoichiometry, morphology, optical and electrical properties of the deposited films. The chemical composition of the films evaluated by energy dispersive X-ray spectroscopy revealed the presence of copper, indium and sulfur elements in the films. Also it was observed that films formed at higher temperatures are copper rich and also showed deficiency of sulfur. X-ray diffraction patterns showed that the sprayed CuInS 2 films are polycrystalline with chalcopyrite structure and preferred orientation in the (112) direction. Atomic force microscope studies revealed significant variations in the surface morphology of the prepared films with different deposition temperature. An increase in the energy band gap was observed with increasing the deposition temperatures. The temperatures dependence of conductivity of CuInS 2 thin films, determined in the temperature range of 225-400 K, showed their semiconducting behavior.
Structural and optical properties of sprayed CuInS2 films
Thin Solid Films, 1983
p-CuInSe2 thin films with the chalcopyrite structure were prepared by spray pyrolysis. The films were characterized by X-ray diffraction, optical transmission, transmission and scanning electron microscopy and electrical measurements. They were found to have a preferred orientation with (112) parallel to the substrate. The resistivity of these films was varied from 0.1 to about 100 1) cm by varying the Cu: In ratio from 1.2 to unity.