Influence of copper purity on microstructure and electromigration (original) (raw)

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729), 2004

Abstract

Electromigration in copper damascene interconnects is usually associated with interfacial diffusion at the copper/ dielectric barrier interface. In this study, we demonstrate how impurity and microstructural properties of the bulk copper can influence failures at the copper/dielectric barrier interface. Impurity concentrations in the bulk copper were modulated by varying electroplating conditions and the resulting effects on the copper microstructure and

V. Terzieva hasn't uploaded this paper.

Let V. know you want this paper to be uploaded.

Ask for this paper to be uploaded.