Oxygen precipitates in short-time annealed Czochralski silicon (original) (raw)
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Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon
IEEE Journal of Photovoltaics
The impact of oxygen precipitates and dislocations on carrier recombination is investigated on thick silicon slabs cut vertically from a Czochralski-grown silicon ingot. Using a combination of photoluminescence imaging, photoluminescence spectroscopy and Fourier transform infrared spectroscopy, we investigate the impact of pre-anneal on their recombination activity. We show that the vacancy concentration during precipitate growth affects the recombination activity of oxygen precipitates. Finally we demonstrate the impact of non-equilibrium point defect concentrations on precipitate and dislocation growth.
Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon
Journal of Physics: Condensed Matter, 2002
Results are presented on the photoluminescence (PL) characterization of heavily doped p + Czochralski silicon, which has been subjected to a two-step, oxygen precipitation heat treatment. It will be shown that the presence of oxygen precipitates gives rise to the D1, D2 and D5 lines, where the energy of the D1 line shifts to lower values for a stronger degree of precipitation. The occurrence of these PL features is also a function of the boron concentration in the p + material. The PL results are compared with Fourier transform infrared absorption data and with transmission electron microscopy results. From this, it is concluded that PL has a good potential for use in the assessment of oxygen precipitation in heavily doped silicon.
Physica B: Condensed Matter, 1998
Annealing of Cz-Si at enhanced pressures gives rise to the creation of oxygen precipitates with smaller sizes and higher concentrations in comparison to the case of annealing at atmospheric pressure. This effect is more pronounced for pressures above 0.1 GPa. The pressure (about 1.0 GPa) treatment at temperatures below 900 C leads to the stabilization of the OP precursors (of the local oxygen reach areas) and after prolonged annealing to their coexistence with OP. The last effect is most likely connected with a decrease in the OP size with pressure to some critical value which is lower than that needed for OP existence.
Journal of Applied Physics, 2013
A comparative investigation is performed on the effects of vacancies induced by rapid thermal processing on oxygen precipitation behavior in heavily arsenic-and antimony-doped Czochralski silicon wafers. It is experimentally found that vacancy-assisted oxide precipitate nucleation occurs at 800, 900, and 1000 C in the Sb-doped wafers, while it only occurs at 800 C in the As-doped ones. Density functional theory calculations indicate that it is energetically favorable to form AsVO and SbVO complexes in As-and Sb-doped silicon crystals, respectively. These complexes might act as precursors for oxide precipitate nucleation under appropriate conditions. The difference between the effects of rapid thermal processing -induced vacancies on oxide precipitate nucleation in the heavily As-and Sb-doped Cz silicon crystals is tentatively elucidated based on density functional theory calculations revealing the difference in binding energies of AsVO and SbVO complexes. V C 2013 AIP Publishing LLC. [http://dx.
Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafers
Materials Science and Engineering: B, 1996
Gate oxide integrity (GOI) tests, surface photovohage and deep level transient spectroscopy of Czochralski silicon waters reveal oxide degradation at heavy precipitation, defect-controlled recombination lifetime and defect-induced deep levels. Electron beam induced current measurements on those wafers before and after intentional metal decoration reveal relatively shallow levels in the non-decorated state and deep levels in the decorated state. It is shown that the actual contamination level determines the usefulness of GOI tests for predicting material performance in device processing.
Characterization of Oxide Precipitates in Heavily B-Doped Silicon by Infrared Spectroscopy
Journal of The Electrochemical Society, 2004
Infrared absorption spectra of oxygen precipitates in boron-doped silicon with a boron concentration between 10 17 and 10 19 cm Ϫ3 are analyzed, applying the spectral function representation of composite materials. The aspect ratio of the platelet precipitates is determined by transmission electron microscopy measurements. The analysis shows that in samples with moderate doping levels (Ͻ10 18 B cm Ϫ3 ͒ SiO ␥ precipitates are formed with the same composition as in the lightly doped case. In the heavily boron-doped (Ͼ10 18 cm Ϫ3 ͒ samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO 2 and B 2 O 3 , with a volume fraction of B 2 O 3 as high as 0.41 in the most heavily doped case.