Growth and Characterization of MFS and MFIS Preliminary Prototype Device with Ba0.7(Sr)0.3TiO3 Thin Film for Non-volatile Memory Device Application (original) (raw)
Ba1-x(Sr)xTiO3 (x=0.3mol) (BST) powder was formulated and prepared by solid state mixed oxide route. The phase evaluation and structural properties of BST powder were studied by X-ray Diffractometer (XRD) with the Bragg angle between 10° to 70°. The microstructure grains growth of the BST powder was investigated by Scanning Electron Microscopy (SEM). Ba1-x(Sr)xTiO3 film was formed on naked p-Si (100) and oxide layer buffered p-Si (100) substrates by spin coating technique. After spin coating, subsequent annealing (500°C to 700°C) in oxygen and atmospheric ambient was followed to form the BST oxide film from BST sol solution coating. SEM investigation (planner and cross-sectional views) was carried out to examine the surface morphology and film thickness. Capacitance and voltage (C-V) characteristics of MFS and MFIS prototype devices were observed.<br>
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