Space charge formation in chromium compensated GaAs radiation detectors (original) (raw)

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Influence of electron traps on charge-collection efficiency in GaAs radiation detectors Cover Page

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Charge Transport and Space-Charge Formation in Cd1−xZnxTe1−ySey Radiation Detectors Cover Page

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Characterization of GaAs:Cr sensors using the charge-integrating JUNGFRAU readout chip Cover Page

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Theoretical Calculation of a Charged Particle Detector’s Response Fabricated by Semi Insulating (SI) GaAs Cover Page

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Monte Carlo simulator of the charge signal induced by external radiation on semi-insulating GaAs detectors Cover Page

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<title>Charge transport mechanism in CdTe-based <emph type="1">p-n</emph> junction detectors formed by laser irradiation</title> Cover Page

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Performance of a new ohmic contact for GaAs particle detectors Cover Page

Analysis of radiation effects on some properties of GaAs : Cr and Si sensors exposed to a 22 MeV electron beam

2019

Nowadays, the experiments related to High Energy Physics and others fields demand the use of detectors with greater radiation resistance, and the novel material GaAs:Cr has demonstrated excellent radiation hardness compared with other semiconductors. On the basis of evidence obtained in the JINR experiment with the use of 22 MeV electrons beam generated by the LINAC-800 accelerator, an analysis of electron radiation effects on GaAs:Cr and Si detectors is presented. The measured I-V characteristics showed a dark current increase with dose, and an asymmetry between the two branches of behaviors for all detectors. Analyzing the MIP spectra and CCE dose dependence measurements a deterioration process of detectors collection capacity with dose increase was found, although behaviors are somewhat different according to the detector type. The detailed explanation of these effects from the microscopic point of view appears in the text, and are generally linked to the generation of atomic dis...

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Analysis of radiation effects on some properties of GaAs : Cr and Si sensors exposed to a 22 MeV electron beam Cover Page

Characterization of Chromium Compensated GaAs Sensors with the Charge-Integrating JUNGFRAU Readout Chip by Means of a Highly Collimated Pencil Beam

2021

Chromium compensated GaAs or GaAs:Cr sensors provided by the Tomsk State University (Russia) were characterized using the low noise, charge integrating readout chip JUNGFRAU with a pixel pitch of 75 × 75 µm2 regarding its application as an X-ray detector at synchrotrons sources or FELs. Sensor properties such as dark current, resistivity, noise performance, spectral resolution capability and charge transport properties were measured and compared with results from a previous batch of GaAs:Cr sensors which were produced from wafers obtained from a different supplier. The properties of the sample from the later batch of sensors from 2017 show a resistivity of 1.69 × 109 Ω/cm, which is 47% higher compared to the previous batch from 2016. Moreover, its noise performance is 14% lower with a value of (101.65 ± 0.04) e− ENC and the resolution of a monochromatic 60 keV photo peak is significantly improved by 38% to a FWHM of 4.3%. Likely, this is due to improvements in charge collection, low...

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Characterization of Chromium Compensated GaAs Sensors with the Charge-Integrating JUNGFRAU Readout Chip by Means of a Highly Collimated Pencil Beam Cover Page

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Modeling of Semiconductor Detectors Made of Defect-Engineered Silicon: The Effective Space Charge Density Cover Page