Electron mobility in nanocrystalline silicon devices (original) (raw)

Electron mobility in nanocrystalline silicon devices

Journal of Applied Physics, 2006

Abstract

Electron mobility in the growth direction was measured using space charge limited current techniques in device-type nin structure nanocrystalline Si: H and nanocrystalline Ge: H structures. The films were grown on stainless steel foil using either hot wire or remote ...

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