In0.30Ga0.70As QW MOSFETs with peak mobility exceeding 3000 cm2/V·s fabricated on Si substrates (original) (raw)
2016
Abstract
We report the fabrication of self-aligned In<sub>0.30</sub>Ga<sub>0.70</sub>As quantum well (QW) MOSFETs on Si substrates. The layer structures for device fabrication were grown using MOCVD on a 200 mm Si substrate with threading dislocation density lower than 2×10<sup>7</sup> cm<sup>-2</sup>. Si-CMOS compatible process modules were used. The QW MOSFET achieved a drive current exceeding 200 μA/μm at V<sub>GS</sub>-V<sub>TH</sub> = 1.75 V and V<sub>DS</sub> = 1.2 V at channel length of 0.9 μm. Furthermore, peak device mobility of 3011 cm<sup>2</sup>/V·s was obtained.
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