High mobility In0.30Ga0.70As MOSHEMTs on low threading dislocation density 200 mm Si substrates: A technology enabler towards heterogeneous integration of low noise and medium power amplifiers with Si CMOS (original) (raw)
2017 IEEE International Electron Devices Meeting (IEDM)
Abstract
An approach for heterogeneous integration of InGaAs MOSHEMTs and Si-CMOS is proposed and a high quality multi-layer transfer process is demonstrated in 200 mm wafer scale. Heterostructures for In0.30Ga0.70As MOSHEMTs were grown using MOCVD on 200 mm Si substrates with record low threading dislocation density of < 2 × 10<sup>7</sup> cm<sup>−2</sup>. Devices with a Si-CMOS compatible front-end process were fabricated and the impact of the heterostructure design and doping on device performance is studied. Low subthreshold swing with minimum (Smin) down to 70 mV/decade was achieved by employing an InGaP top barrier layer and a cap doping of ∼2 × 10<sup>19</sup> cm<sup>−3</sup> was obtained with a Si-Te co-doping technique. An effective mobility (μ<inf>eff</inf>) of ∼4900 cm<sup>2</sup>/Vs at sheet electron density (N) of 3 × 10<sup>12</sup> cm<sup>−2</sup> was achieved which is record among InxGa<inf>1</inf>-xAs (x < 0.53) MOSFETs on Si substrates. In addition, current-gain cut-off frequency f<inf>T</inf>) of ∼60 GHz was extracted for 150 nm channel length MOSHEMTs.
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