The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs (original) (raw)

2017 Symposium on VLSI Technology

Abstract

The world's first GeSn p-FinFETs formed on a novel GeSn-on-insulator (GeSnOI) substrate is reported, with channel lengths L<inf>ch</inf> down to 50 nm and fin width W<inf>Fin</inf> down to 20 nm. In comparison with other reported GeSn p-FETs, record low S of 79 mV/decade, record high G<inf>m, int</inf>, of 807 μS/um (VDs of −0.5 V), and the highest G<inf>m, int</inf>/S<inf>sat</inf>, were achieved. The highest high-field hole mobility of 208 cm2/Vs (at inversion carrier density of 8×10⁻² cm⁻²) for GeSn p-FETs with CVD grown GeSn channel was also obtained.

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