Influence of substrate temperature on the structural and optical properties of crystalline ZnO films obtained by pulsed spray pyrolysis (original) (raw)
Related papers
ZnO thin films by spray pyrolysis and its doping with Sb
2012
Highly transparent ZnO thin films were prepared using spray pyrolysis of a solution containing Zn(OAc)2 and SbC13 on glass substrates kept at 400 *C. Further, these films were doped with Sb by in situ process by dissolving SbCl3 in the spray solution. Crystallographic structural analysis was done using X-ray diffractometer and elemental analysis was done using Auger electron spectrometer. Morphological characterization was done by atomic force microscopy. The UV-Vis transmittance measurements indicated that the films were 90% transparent in the visible region. The value of band gap energy calculated from UV-Vis characterization showed that undoped and Sb doped films have slightly different band-gap energies. The electrical resistivity measurements showed a substantial change in the resistance of the ZnO thin films due to Sb doping.
The Pure zinc oxide (ZnO) thin films of different substrate temperature have been prepared on well cleaned glass substrate by improved spray pyrolysis technique. The gross structure of the annealed films have been examined by X-ray diffraction (XRD) technique using powder X-ray diffractometer which reveals the enhancement of crystallinity with increase in the deposition temperature. Surface morphology of the synthesized ZnO thin films have been analyzed by means of atomic force microscopy (AFM) which reveals average particle size of as synthesize ZnO thin films has been found to be 79 nm. The band gap as deposited ZnO have been examined by UV-Vis spectroscopy carried out in absorption mode by Double Beam UV-VIS Spectrophotometer with radiations in the range of í µí»= 190 nm to 1100 nm which is in the range of 3.03 eV to 3.16 eV.
Advanced Functional Materials, 2010
Silicided Ni/Au contacts with very low contact resistance were realized on p-type [001] silicon at low temperature by ex-situ or, alternatively, by in situ annealing processes. During the ex-situ annealing, performed at 200 C for 10 s, a uniformly thin (14 nm) Ni 2 Si layer was formed having an extremely flat interface with silicon thanks to the trans-rotational structure of the silicide. During the in situ annealing, promoted by a sputter etch processing (T < 300 C), a 44 nm-thick silicide layer was formed as a mixture of trans-rotational NiSi and epitaxial NiSi 2, domains. In both cases, using a low thermal budget has guaranteed a limited consumption of silicon during the reaction process and a good adhesion with the substrate avoiding gold contaminations. As a consequence of the presence of trans-rotational domains, wherein a pseudo-epitaxial relationship between the silicide and the silicon lattices is established, an ohmic behavior was observed in a wide range of substrate doping (3.5 Â 10 18 Ä 3 Â 10 19 B/cm 3 ) for both annealing processes (in situ and ex-situ). On the other hand, conventional TiNiAu and CrNiAu contacts showed, in the same range of B doping concentration, a rectifying behavior with systematically higher specific contact resistance values (R c ) compared to those of the Ni silicided contacts. V
2015
In this research work the role of annealing temperature on optical properties of ZnO thin films prepared by spray pyrolysis method at a substrate temperature of 573K has been studied. The optical properties of asdeposited samples and samples annealed at 573K and 673K were investigated in the wavelength range of 380-750nm using a double beam UV-VISNIR spectrophotometer. The results showed that all the films have direct optical transition and showed the larger values of optical transparency (greater than 80%) with increase in annealing temperatures. The optical band gap energy was found to be in the range of 3.2-3.85 eV with increasing annealing temperature. Similarly other optical parameters were found to improve appreciably with increase in annealing temperature. Keywords— Spray pyrolysis, Substrate temperature, Annealing, ZnO, Band gap.
Preparation and Characterisation of ZnO Thin Films by Spray Pyrolysis Method
Zinc oxide (ZnO) thin film is a transparent conducting oxide thin film and has attracted significant attention because of its potential applications in optoelectronic, solar cells and heat mirrors. The ZnO thin films were deposited by spray pyrolysis method. The films were grown on glass substrates at 415, 445, 475 and 505 o C substrate temperatures. The transmittance in the visible region and energy band gap values range from 79% to 85% and 3.32 to 3.34eV respectively. Raman spectroscopic analysis indicates that there are two peaks at 436 and 556 cm-1. It was concluded that ZnO thin films with optimal growth conditions using spray pyrolysis is an excellent material for transparent conducting oxide films.