Jet Vapor Deposition of Single and Multicomponent Thin Films (original) (raw)
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A Supersonic Plasma Jet Source for Controlled and Efficient Thin Film Deposition
2012
ABSTRACT A novel plasma source suitable for controllable nanostructured thin film deposition processes is proposed. It exploits the separation of the process in two distinct phases. First precursor dissociation and radical formation is performed in a dense oxidizing plasma. Then nucleation and aggregation of molecular clusters occur during the expansion into vacuum of a supersonic jet. This allows a superior control of cluster size and energy in the process of film growth.
Advanced Engineering Materials, 2017
In this work, the use of a newly developed direct liquid injection low pressure chemical vapor deposition (DLI-LPCVD) system is described, which allows for the deposition of thin films in a controlled and reproducible manner. The capabilities of this system are described via silica thin films deposited using the precursor tetraethyl orthosilicate (TEOS). The deposition of thin films is controlled by parameters, such as deposition temperature, partial pressure of the gases, and flow rate of the precursor solution. The thickness of the deposited layer is varied simply by changing deposition temperature and time. X-ray reflectivity and spectroscopic ellipsometry of the deposited samples show that the thickness of the layers is well controlled by deposition temperature and time. Auger electron spectroscopy, in addition, motivates our choice to use cyclohexane as a solvent. A growth rate of 12.2 Åmin À1 is obtained. Atomic force microscopy, Rutherford backscattering spectroscopy, Fourier transform infrared spectroscopy, and drop shape analysis are used to measure roughness, composition, and hydrophobicity. Thin films of silicon dioxide are successfully grown by the newly developed DLI-LPCVD system. This system can be used for a wide range of films by varying the precursors.
Electrohydrodynamic Jet Spraying Technique for Oxide Thin-Film Transistor
IEEE Electron Device Letters, 2013
Electrohydrodynamic (EHD) jet is a printing technique using an electric field to create jetting droplets for the delivery of a liquid portion to a designated substrate. EHD jet spraying was applied to the preparation of a solution-processed zinc-tin-oxide thin-film transistor. The electrosprayed film was characterized by analytical methods. Electrical properties, such as a mobility of 4.89 cm 2 • V • s −1 , a threshold voltage of 7.17 V, a subthreshold slope of 0.44 V • dec −1 , and an onto off ratio of 10 7 , were obtained. Index Terms-Electrohydrodynamic (EHD) jet, spray, thin-film transistor (TFT), zinc-tin oxide (ZTO).
Organic-vapor-liquid-solid deposition with an impinging gas jet
2012
A method for rapid, mass-efficient deposition of highly crystalline organic films under near ambient conditions of pressure and temperature is reported based on delivery of an organic precursor via an impinging gas jet to a substrate coated by a thin liquid solvent layer. Films of the organic semiconductor tetracene were deposited by sublimation into a flow of argon carrier gas directed at an indium-tin-oxide/glass substrate coated by a thin layer of bis(2-ethylhexyl)sebecate, and growth was followed in situ with optical microscopy. A fluid dynamics model is applied to account for the gas phase transport and aggregation, and the results compared to experiment. The combination of gas jet delivery with an organic-vapor-liquid-solid growth mechanism leads to larger crystals and lower nucleation densities than on bare surfaces, with markedly different nucleation and growth kinetics. An explanation based on enhanced solution-phase diffusivity and a larger critical nucleus size in the liquid layer is proposed to account for the differences.
Deposition of thin films using argon/acetylene atmospheric pressure plasma jet
Surface and Coatings Technology
Atmospheric pressure plasma jet was used to deposit polymer films from argon/air/acetylene mixture. Depending on the gas composition, three modes of operation were observed and characterized. The film deposited by a stationary jet had a circular shape with area (where thickness was almost constant) about the nozzle inner diameter. The deposition rate of stationary jet decreased with the time: a film of 2 μm was obtained after the first two minutes, while in the next two minutes only 1.3 μm film was deposited. The plasma polymers were characterized by infrared spectroscopy, where variety of C\ \H and few C\ \O bonds were detected. By using a linear displacement system, we obtained homogeneous deposition over a larger area with deposition rate of about 330 nm/ min, showing the potential of such plasma jet system for large-scale depositions.
Some recent trends in the preparation of thin layers by low pressure chemical vapour deposition
Vacuum, 1984
Recent trends in low pressure chemical vapour deposition (LPCVD) include the use of methods for initiating the deposition process other than thermal irradiation. These trends are reviewed and the use of ultrasonics is suggested as another technique with a number of practical advantages and with the possibility of initiating novel reactions. Other trends involve applications for the deposition of a wider range of materials. In situ doping of polysilicon is an example, and the effect of deposition conditions on the characteristics of such layers is discussed and analysed.