Towards closed loop control of a plasma tool using OES (original) (raw)

Atomic-scale silicon etching control using pulsed Cl2 plasma

Laurent Vallier, Samer Banna

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013

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Real-time plasma control in a dual-frequency, confined plasma etcher

John Ringwood

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Automation of a Mass Flow Controller for Application in Time-Multiplex SF 6 +CH 4 Plasma Etching of Silicon

Rodrigo Pessoa

Contributions to Plasma Physics, 2012

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ELIMINATION OF THE RIE 1 ST WAFER EFFECT: REAL-TIME CONTROL OF PLASMA DENSITY

Fred L Terry

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Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma

Sangwon Ryu

Materials

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Sensitivity studies of silicon etching in chlorine/argon plasmas

Uwe Riedel

Journal of vacuum science & technology, 2000

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Compensation for transient chamber wall condition using real-time plasma density feedback control in an inductively coupled plasma etcher

Fred L Terry

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2003

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Integrated equipment-feature modeling investigation of fluorocarbon plasma etching of SiO[sub 2] and photoresist

terry sparks

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003

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Defining Conditions for the Etching of Silicon in an Inductive Coupled Plasma Reactor

Serrita McAuley

MRS Proceedings, 1999

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Atmospheric-pressure plasma jet system for silicon etching without fluorocarbon gas feed

yasunori Ohtsu

Japanese Journal of Applied Physics, 2017

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Real-time virtual metrology and control of etch rate in an industrial plasma chamber

John Ringwood

2012 IEEE International Conference on Control Applications, 2012

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TOPICAL REVIEW: Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

miko elwenspoek

J Micromechanic Microengineer, 2009

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Real-time Virtual Metrology and Control for Plasma Etch

Shane Lynn

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Simulation of cryogenic silicon etching under SF6/O2/Ar plasma discharge

Fabrice ROQUETA

Journal of vacuum science & technology, 2016

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Etching of SiO[sub 2] and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition

Guy Turban

Journal of Applied Physics, 2000

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Reaction kinetics and reactor modeling of the plasma etching of silicon

Hugo Caram

AIChE Journal, 1987

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SiO2 and Si etching in fluorocarbon plasmas: A detailed surface model coupled with a complete plasma and profile simulator

Guy Turban, G. Kokkoris, Evangelos Gogolides

Microelectronic Engineering, 1999

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Study of the Etching Processes of Si [1 0 0] Wafer Using Ultra Low Frequency Plasma

Mohamed Khedr

Materials Science Forum, 2013

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Computer simulation of a CF4 plasma etching silicon

Daniel L . Flamm

Journal of Applied Physics, 1984

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Low Temperature Plasma Etching Control through Ion Energy Angular Distribution and 3-Dimensional Profile Simulation

Y Fan

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PhD Thesis - Virtual Metrology for Plasma Etch Processes

Shane Lynn

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Simulation of silicon dry etching through a mask in low pressure fluorine-based plasma

Arvaidas Galdikas

Vacuum, 1996

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Simulation of fluorocarbon plasma etching of SiO2 structures

Evangelos Gogolides

Microelectronic Engineering, 2001

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Maintaining reproducible plasma reactor wall conditions: SF6 plasma cleaning of films deposited on chamber walls during Cl2/O2 plasma etching of Si

Harmeet Singh

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2002

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Sensor systems for real‐time feedback control of reactive ion etching

Brian A Rashap, Fred L Terry

1996

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Real-Time Virtual Metrology and Control of Plasma Electron Density in an Industrial Plasma Etch Chamber

Shane Lynn

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Silicon micromachining using a high-density plasma source

Serrita McAuley

Journal of Physics D: Applied Physics, 2001

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Etching with electron beam generated plasmas

Darrin Leonhardt

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2004

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Coupling Gas Phase and Surface Reaction Kinetics In C 4 F 8 and SF 6 Plasmas Used for Si and SiO 2 Etching

Mike Cooke, G. Kokkoris, Andy Goodyear

aiche.confex.com

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Optical monitoring of the end point in thin film plasma etching

Edmundo Braga

Thin Solid Films, 1983

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