Simulation and experimental results on the switching behaviour of bulk-barrier diodes (original) (raw)
2002, Microelectronics Journal
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A model for the dc electrical behaviour of Bulk-Barrier Diodes
Electrical Engineering, Archiv für Elektrotechnik, Vol. 83 (4), pp. 203-211 (2001)
Contents This paper presents an analytical model for the dc electrical behavior of bulk barrier diodes (BBD's). The proposed model extends previously published models, and includes analytical expressions for all signi®cant quantities of the device dc performance, i.e. barrier height, current density and ideality factor, with respect to the technological parameters and the applied voltage in both bias conditions. The analytical results have been compared with those obtained using the 2-D device simulator S-PISCES, which takes into account the drift±diffusion theory, as well as a concentration and ®eld dependent mobility, the Shockley±Read±Hall and Auger carrier recombination, and the band gab narrowing. Good agreement was obtained between theory and simulation. The device simulation played a very important role in best understanding BBD's behavior, because it could easily take into account parameters strongly affecting the behavior of BBD's, e.g. the free carrier presence in depletion layers, which was very dif®cult for the analytical model to include.
A study of the silicon Bulk-Barrier Diodes designed in planar technology by means of simulation
Journal of Engineering Science and Technology Review, Vol. 2, pp. 157-164, (2009).
In this paper, it is studied for the first time, the possibility of manufacturing a Bulk Barrier diode in planar technology using simulation. This study is based on simulation results obtained with a 2-D device simulator (S-PISCES). More precisely, the electrical and switching behavior of the proposed devices in planar technology were investigated. The results of this study show that the technological parameters (doping concentrations), as well as the geometrical sizes (middle region width) and the bias conditions (applied voltage), have significant effects on the electrical and switching behavior of the proposed devices. The appropriate choice of these parameters can reduce the switching time in the range of few picoseconds and also dramatically modify the current through the device. The simulation results of devices in planar technology have been compared with those designed in non planar technology. Finally, good agreement among theory and simulations results of the proposed devices observed.
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