Influence of Cavity Lifetime on High-Finesse Microcavity Two-Photon Absorption Photodetectors (original) (raw)
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IEEE Journal of Quantum Electronics, 2000
The influence of the limited acceptance angle of a high-finesse microcavity two-photon absorption photodetector on its response has been investigated. It is shown that the limited acceptance angle of the microcavity explains the observed asymmetry seen in the spectral dependence of the microcavity. The theory describing the influence of the acceptance angle allows for an optimum incident beam waist for any cavity structure to be calculated, with an optimum spot diameter of 7 m having been calculated for the microcavity under test. The theory also enables the calculation of an optimum incident spot size for any microcavity. It is shown that a cavity with higher overall reflectivity require larger input spot sizes in order to optimize the level of generated two-photon absorption.
Polarization dependence of a GaAs-based two-photon absorption microcavity photodetector
Optics Express, 2008
In this paper, the polarization response of a GaAs based twophoton absorption microcavity photodetector has been studied. The deviation in the dependence of the detector response from that of bulk GaAs is shown to be due to the birefringence of the cavity. A theoretical model based on the convolution of the cavity birefringence and the polarization dependence of two-photon absorption in GaAs is described and shown to match the measured polarization dependence of the microcavity detector very well.
Microcavity Silicon Photodetectors at 1.55 μm
Advances in OptoElectronics, 2011
The design, the realization, and the characterization of silicon resonant cavity enhanced (RCE) photodetectors, working at 1.55 μm, are reported. The photodetectors are constituted by a Fabry-Perot microcavity incorporating a Schottky diode. The working principle is based on the internal photoemission effect. We investigated two types of structures: top and back-illuminated. Concerning the top-illuminated photodetectors, a theoretical and numerical analysis has been provided and the device quantum efficiency has been calculated. Moreover, a comparison among three different photodetectors, having as Schottky metal: gold, silver, or copper, was proposed. Concerning the back-illuminated devices, two kinds of Cu/p-Si RCE photodetectors, having various bottom-mirror reflectivities, were realized and characterized. Device performances in terms of responsivity, free spectral range, and finesse were theoretically and experimentally calculated in order to prove an enhancement in efficiency due to the cavity effect. The back-illuminated device fabrication process is completely compatible with the standard silicon technology.