Gas sensitive ZnO thin films with desired (002) or (100) orientation obtained by ultrasonic spray pyrolysis (original) (raw)
Related papers
ZnO thin films by spray pyrolysis and its doping with Sb
2012
Highly transparent ZnO thin films were prepared using spray pyrolysis of a solution containing Zn(OAc)2 and SbC13 on glass substrates kept at 400 *C. Further, these films were doped with Sb by in situ process by dissolving SbCl3 in the spray solution. Crystallographic structural analysis was done using X-ray diffractometer and elemental analysis was done using Auger electron spectrometer. Morphological characterization was done by atomic force microscopy. The UV-Vis transmittance measurements indicated that the films were 90% transparent in the visible region. The value of band gap energy calculated from UV-Vis characterization showed that undoped and Sb doped films have slightly different band-gap energies. The electrical resistivity measurements showed a substantial change in the resistance of the ZnO thin films due to Sb doping.
Advanced Functional Materials, 2010
Silicided Ni/Au contacts with very low contact resistance were realized on p-type [001] silicon at low temperature by ex-situ or, alternatively, by in situ annealing processes. During the ex-situ annealing, performed at 200 C for 10 s, a uniformly thin (14 nm) Ni 2 Si layer was formed having an extremely flat interface with silicon thanks to the trans-rotational structure of the silicide. During the in situ annealing, promoted by a sputter etch processing (T < 300 C), a 44 nm-thick silicide layer was formed as a mixture of trans-rotational NiSi and epitaxial NiSi 2, domains. In both cases, using a low thermal budget has guaranteed a limited consumption of silicon during the reaction process and a good adhesion with the substrate avoiding gold contaminations. As a consequence of the presence of trans-rotational domains, wherein a pseudo-epitaxial relationship between the silicide and the silicon lattices is established, an ohmic behavior was observed in a wide range of substrate doping (3.5 Â 10 18 Ä 3 Â 10 19 B/cm 3 ) for both annealing processes (in situ and ex-situ). On the other hand, conventional TiNiAu and CrNiAu contacts showed, in the same range of B doping concentration, a rectifying behavior with systematically higher specific contact resistance values (R c ) compared to those of the Ni silicided contacts. V