An explicit analytical charge-based model of undoped independent double gate MOSFET (original) (raw)
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Explicit Analytical Charge and Capacitance Models of Undoped Double-Gate MOSFETs
IEEE Transactions on Electron Devices, 2007
An analytical, explicit, and continuous-charge model for undoped symmetrical double-gate (DG) MOSFETs is presented. This charge model allows obtaining analytical expressions of all total capacitances. The model is based on a unified-chargecontrol model derived from Poisson's equation and is valid from below to well above threshold, showing a smooth transition between the different regimes. The drain current, charge, and capacitances are written as continuous explicit functions of the applied bias. We obtained very good agreement between the calculated capacitance characteristics and 2-D numerical device simulations, for different silicon film thicknesses. Index Terms-Compact device modeling, Double-gate (DG) MOSFET, intrinsic capacitances.
Solid-State Electronics, 2007
An explicit current-voltage model for undoped double-gate MOSFETs based on an accurate analytic approximation to the carrier concentration is presented in this paper. An analytic approximation solution to the carrier (electron) concentration is derived from the Taylor expansion of the exact solution of the Poisson equation. This analytic approximation gives a highly accurate result of the electron concentration when compared with that evaluated by Newton-Raphson iterative. The resulting electron concentration is then coupled to the Pao-Sah current equation to produce an explicit current-voltage model for symmetric undoped double-gate MOSFETs. The model predictions have been extensively validated by numerical simulations.
New Explicit Charge and Capacitance Models for Undoped Surrounding Gate MOSFETs
2007 Spanish Conference on Electron Devices, 2007
We present an analytical and continuous charge model for cylindrical undoped surrounding gate (SGT) MOSFETs, from which analytical expressions of all total capacitances are obtained. The model is based on a unified charge control model derived from Poisson's equation. The drain current, charge and capacitances are written as continuous explicit functions of the applied voltages. The calculated capacitance characteristics show an excellent agreement with 3D numerical device simulations
A compact model for the I–V characteristics of an undoped double-gate MOSFET
Mathematics and Computers in Simulation, 2008
An analytic model for the I-V characteristics of a symmetric, undoped, double gate MOSFET is presented. The model is twodimensional and extends recent work by Chen and Taur. The formulae involve the LambertW function recently used by Ortiz-Conde to obtain threshold voltage approximations of an undoped single gate MOSFET. The drift diffusion equations are also solved numerically and our approximate solution for the Fermi potential is shown to be in close agreement with the exact numeric solution.
Analytic Solution for the Drain Current of Undoped Symmetric Dual-Gate MOSFET
2005
A potential-based drain current model is presented for nanoscale undoped-body symmetric double gate MOSFETs. It is based on a fully coherent physical description and consists of a single analytic equation that includes both drift and diffusion contributions. The derivation is completely rigorous and based on a procedure previously enunciated for long-channel bulk SOI MOSFETs. The resulting expression is a continuous description valid for all bias conditions, from subthreshold to strong inversion and from linear to saturation operation. The validity of the model has been ascertained by extensive comparison to exact numerical simulations. The results attest to the excellent accuracy of this formulation.
Modeling the undoped-body symmetric dual-gate MOSFET
Proceedings of the Fifth IEEE International Caracas Conference on Devices, Circuits and Systems, 2004., 2004
A model of the undoped-body symmetric dual-gate MOSFET is presented based on the explicit analytic solution of its surface potential using the Lambert W Function. The total channel carrier charge and drain current may be readily obtained from this solution. Results from the proposed solution are compared to exact results numerically calculated by iteration.
IEEE Transactions on Electron Devices, 2008
A drain-current model for undoped symmetric double-gate MOSFETs is proposed. Channel-length modulation and drain-induced barrier lowering are modeled by using an approximate solution of the 2-D Poisson equation. The new model is valid and continuous in linear and saturation regimes, as well as in weak and strong inversions. Excellent agreement was found with Silvaco-ATLAS simulations. Index Terms-Compact device modeling, double gate (DG), MOSFET, short-channel effects.
Explicit continuous model for long-channel undoped surrounding gate MOSFETs
IEEE Transactions on Electron Devices, 2005
We present an analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs in which the channel current is written as an explicit function of the applied voltages. The model is based on a new unified charge control model developed for this device. The explicit model shows good agreement with the numerical exact solution obtained from the new charge control model, which was previously validated by comparison with three-dimensional numerical simulations. Index Terms-Charge control model, compact device modeling, surrounding-gate (SGT) MOSFETs. Benjamin Iñíguez (M'96-SM'03) received the B.S., M.S., and the Ph.D. degrees in physics from the University of the Balearic Islands, Spain, in 1989Spain, in , 1992Spain, in , and 1996. His doctoral research focused on the development of CAD models for short-channel bulk-Si and SOI MOSFETs.
Rigorous analytic solution for the drain current of undoped symmetric dual-gate MOSFETs
Solid-State Electronics, 2005
We describe a new drain current model for nanoscale undoped-body symmetric dual-gate MOSFETs based on a fully consistent physical description. The model consists on a single analytic equation that includes both drift and diffusion contributions. It is built on the basis of the potentials at the surface and at the center of the silicon film evaluated at the source and drain ends. The derivation is completely rigorous and is based on a procedure previously enunciated for long-channel bulk SOI MOSFETs. The expression is a continuous description valid for all bias conditions, from subthreshold to strong inversion and from linear to saturation operation. The validity of the model has been ascertained by extensive comparison to exact numerical simulations. The results attest to the excellent accuracy of this formulation.
Drain current and transconductance model for the undoped body asymmetric double-gate MOSFET
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007
A surface potential-based drain current and transconductance model for undoped-body asymmetric double-gate MOSFETs are presented. They are built on the basis of the front and back surface potentials and a charge coupling variable evaluated at the source and drain ends. The model consists of single analytic equations which are valid for all bias conditions, from subthreshold to strong inversion and from linear to saturation operation. Its validity has been verified by comparison to numerical simulations.