The surface profile of charge of Si(111)(7×7) obtained with He scattering (original) (raw)

Solid State Communications, 1981

Abstract

Abstract Theoretical calculations in good agreement with experimental data of He scattering from Si(111)(7×7) by Cardillo and Becker are presented. From the analysis, it is concluded that (i) the charge distribution in the surface is disposed in two terraces, each one occupying “half” of the reconstructed (7×7) unit cell and separated by a distance of 3.05 A perpendicular to the surface. The profile of charge on the terraces presents peak to valley oscillations smaller than ∼0.3 A, (ii) there exists a shallow attractive well with a depth D ≅-4.2 meV and we infer two bound states ϵ0≅-3.8 meV and ϵ1≅-0.7 meV. The “consistency” of our analysis with the proposed models for the (7×7) reconstruction is discussed.

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