Characterization of thin film CuInSe2 and CuGaSe2: The existence and identification of secondary phases (original) (raw)

Characterization of CuInSe2 thin films elaborated

2008

In this paper, we report the elaboration and characterization of CuInSe 2 thin films prepared by electrochemical deposition technique. The thin films were deposited at room temperature using two electrodes cell configuration, then they annealed under argon atmosphere at 300 °C for 30 and 45 mn. The structural and optical properties of the films were characterized respectively by means of X-ray diffraction and transmission spectrophotometer measurements. The band gap of the samples was estimated using optical transmittance. All elaborated films show the tetragonal chalcopyrite CuInSe 2 with preferential orientation plan. X-ray diffraction and calculation of grain size of the films show that the film annealed at 300 °C during 45 mn presents a good cristallinity, high grain size and its band gap is close to 1.1 eV. Résumé -Dans cet article, nous rapportons l'élaboration et la caractérisation des couches minces de Cuivre Indium Sélénium (CuInSe 2 ) par la technique d'électrodéposition. Les couches minces ont été déposées à température ambiante en utilisant un système à deux électrodes. Après l'élaboration, les couches ont subi un recuit thermique sous atmosphère d'argon à une température de 300 °C durant 30 et 45 mn. Les propriétés structurale et optique de ces couches ont été caractérisées par la diffraction des rayons X (DRX) et les mesures de la transmittance optique. L'énergie du gap est estimée à partir de l'absorbance optique. Tous les films montrent la phase CuInSe 2 ayant la direction (112) comme axe privilégié de croissance. Les spectres de diffraction des RX et le calcul des tailles de grains montrent que le film qui subit un recuit à 300 °C durant 45 mn présente une meilleure cristallinité et une taille de grains relativement élevée, son énergie de gap est de l'ordre de 1.1 eV.

Study of polycrystalline CuInSe2 thin film formation

Thin Solid Films, 2004

CuInSe 2 polycrystalline films were grown on glass substrates by preparing stacked elemental layers (SELs) of Cu, In and Se followed by annealing at 200, 250, 300 and 400 jC for different times (from 15 to 240 min). Additional growth of the various phases was followed at different temperatures until a single phase CuInSe 2 film was formed. X-ray diffraction (XRD) was used in identifying the different phases formed. It was concluded that a single phase of CuInSe 2 film is obtained at a reaction temperature of 300 jC for a heating time z 1 h.