Ultrafast transmittance changes induced by exciton or carrier photogeneration in InGaAs/InP quantum wells (original) (raw)

Ultrashort, nonlinear, optical time response of Fe-doped InGaAs/InP multiple quantum wells in 1.55-μm range

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Applied Physics Letters, 2003

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Decay times of excitons in lattice-matched InGaAs/InP single quantum wells

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Nonlinear absorption temporal dynamics of Fe-doped GaInAs/InP multiple quantum wells

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Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells

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Optically induced ultrafast quenching of the semiconductor quantum well luminescence

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Excitonic signatures in the photoluminescence and terahertz absorption of a GaAs∕AlxGa1−xAs multiple quantum well

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Femtosecond gain dynamics in InGaAs/AlGaAs strained-layer single-quantum-well diode lasers

Chi-kuang Sun

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Direct measure of the exciton formation in quantum wells from time resolved interband luminescence

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2004

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Rapid modulation of interband optical properties of quantum wells by intersubband absorption

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Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes

Steven Denbaars

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Polarization-dependent exciton linewidth in semiconductor quantum wells: A consequence of bosonic nature of excitons

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Albert Heberle

1995

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