Optical monitoring of the growth rate reduction by CCl4 during metalorganic vapour-phase epitaxy deposition of carbon doped GaAs (original) (raw)

Journal of Crystal Growth, 1998

Abstract

Metalorganic vapor-phase epitaxy (MOVPE) growth of heavily doped GaAs has been studied by reflectometry with a 632.8nm laser beam. The measurement of reflection intensity gives the growth rate and the morphology of the layer. Small changes in the refractive index due to high carbon doping (1020cm−3 and above) gives rise to oscillations in the reflectometric signal. A reduction in the growth rate of C-doped GaAs, was attributed to the etching by GaClx (x=1–3) species associated with the use of CCl4. There is no significant change in the growth rate if the growth temperature is smaller than a critical value depending on [Ga(CH3)3]/[CCl4] ratio. However, above this critical temperature, a steep decrease in the growth rate and a poor morphology of the surface layer are observed and lead to the reduction in reflection intensities. These results are analyzed using microscopic observations and a thermodynamic calculation.

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