Stanford 2 D Semiconductor ( S 2 DS ) model Version : 1 . 1 . 0 (original) (raw)
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Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transistors
Applied Physics Letters, 2002
We present a code for the quantum simulation of ballistic metal-oxide-semiconductor field effect transistors ͑MOSFETs͒ in two dimensions, which has been applied to the simulation of a so-called ''well-tempered'' MOSFET with channel length of 25 nm. Electron confinement at the Si/SiO 2 interface and effective mass anisotropy are properly taken into account. In the assumption of negligible phonon scattering in nanoscale devices, transport is assumed to be purely ballistic. We show that our code can provide the relevant direct-current characteristics of the device by running on a simple high-end personal computer, and can be a useful tool for the extraction of physics-based compact models of nanoscale MOSFETs.
IEEE Transactions on Electron Devices, 2017
In this paper, we present a compact model for surface potential and drain current in transition metal dichalcogenide (TMD) channel material-based n-type and p-type FETs. The model considers 2-D density of states and Fermi-Dirac statistics along with drift-diffusion transport model and includes velocity saturation and trap state effects. The developed model has been implemented in Verilog-A and is applicable for symmetric double gate as well as top-gated TMD-on-insulator FETs. The presented model is extensively validated with simulation as well as experimental data for different TMD materials-based FETs and shows excellent agreement with both the simulation and the experimental data. We further validate the model at circuit level using experimental data of MoS 2 FET-based inverter. Index Terms-2-D semiconductor, circuit simulation, compact model, molybdenum disulphide (MoS 2), molybdenum ditelluride (MoTe 2), transition metal dichalcogenide (TMD), tungsten diselenide (WSe 2). I. INTRODUCTION F OR the post-Silicon era, potential channel material alternatives being explored are III-V materials, Germanium (Ge), and 2-D materials, including transition metal dichalcogenides (TMDs) [1]-[8]. TMDs, such as MoS 2 , WSe 2 , MoTe 2 , and so on, are attractive options for channel material in scaled devices for low power electronic and other applications [9]-[12]. The TMD materials can be grown from single layer to multiple layers and their electronic properties vary with the number of layers [13], [14]. The feasibility of layered material growth in the channel leads to better gate control, and therefore, is promising for advanced technology nodes.
Modelling and simulation challenges for nanoscale MOSFETs in the ballistic limit
Solid-State Electronics, 2004
In this paper, we present the main issues and the modelling approaches for the simulation of nanoscale MOSFETs in which transport is dominated by ballistic electrons. We show that is indeed possible to compute in an accurate way the density of states in the channel in the case of quantum confinement without solving the complete two-dimensional Schr€ odinger equation. We are developing modelling tools that can be applied to several types of MOSFET structures: bulk, strained-Si and ultra-thin SOI MOSFETs, FINFETs, double gate MOSFETs and Schottky barrier MOSFETs. Here, results for silicon germanium and bulk silicon devices with channel length of 25 nm are presented. In the present form, tools are limited to the case of fully ballistic transport, which might be reached by the extremely scaled MOSFETs at end of the Roadmap.
2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013
We study the transport properties of monolayer transition metal Dichalcogenides (TMDs) MX 2 (M = Mo, W; X = S, Se, Te) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using an atomistic tight-binding fullband ballistic quantum transport simulations, with hopping potentials obtained from density functional theory. We discuss the subthreshold slope (SS), drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX 2 MOSFETs. We also report the possibility of negative differential resistance to the extent quasiballistic transport exists in such nanostructure TMD MOSFETs.
Micromachines
With the rapid miniaturization of integrated chips in recent decades, aggressive geometric scaling of transistor dimensions to nanometric scales has become imperative. Recent works have reported the usefulness of 2D transition metal dichalcogenides (TMDs) like MoS2 in MOSFET fabrication due to their enhanced active surface area, thin body, and non-zero bandgap. However, a systematic study on the effects of geometric scaling down to sub-10-nm nodes on the performance of MoS2 MOSFETs is lacking. Here, the authors present an extensive study on the performance of MoS2 FETs when geometrically scaled down to the sub-10 nm range. Transport properties are modelled using drift-diffusion equations in the classical regime and self-consistent Schrödinger-Poisson solution using NEGF formulation in the quantum regime. By employing the device modeling tool COMSOL for the classical regime, drain current vs. gate voltage (ID vs. VGS) plots were simulated. On the other hand, NEGF formulation for quan...
Modeling of ballistic nanoscale MOSFETs
We present a code for the quantum simulation of ballistic MOSFETs in two-dimensions, which has been applied to the simulation of a so-called "Well-tempered" MOS-FET with channel length of 25 nm. Electron confinement at the Si/SiO ¾ interface and effective mass anisotropy are properly taken into account. In the assumption of negligible phonon scattering in nanoscale devices, transport is assumed to be purely ballistic. We show that our code can provide the relevant DC characteristics of the device, and can be a useful tool for the extraction of physics-based compact models of nanoscale MOSFETs.
Efficient and Versatile Modeling of Mono- and Multi-Layer MoS2 Field Effect Transistor
Electronics
Two-dimensional (2D) materials with intrinsic atomic-level thicknesses are strong candidates for the development of deeply scaled field-effect transistors (FETs) and novel device architectures. In particular, transition-metal dichalcogenides (TMDCs), of which molybdenum disulfide (MoS2) is the most widely studied, are especially attractive because of their non-zero bandgap, mechanical flexibility, and optical transparency. In this contribution, we present an efficient full-wave model of MoS2-FETs that is based on (1) defining the constitutive relations of the MoS2 active channel, and (2) simulating the 3D geometry. The former is achieved by using atomistic simulations of the material crystal structure, the latter is obtained by using the solver COMSOL Multiphysics. We show examples of FET simulations and compare, when possible, the theoretical results to the experimental from the literature. The comparison highlights a very good agreement.