Simulated I-V characteristics of non-uniformly doped microwave GaAs MESFET's (original) (raw)

4th IEEE International Conference on Vacuum Electronics, 2003

Abstract

To enhance the performance of a low-noise microwave GaAs MESFET an appropriate doping profile is required. The I-V characteristics of a microwave GaAs MESFETs with graded channel doping have been simulated by using a non-linear model. It has been shown that a device with a graded channel doping may give transconductance, gm at least 4 times greater than the uniformly

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