Dual comb-type electrodes as a plasma source for very high frequency plasma enhanced chemical vapor deposition (original) (raw)

Thin Solid Films, 2010

Abstract

ABSTRACT Dual comb-type electrodes were developed as a plasma source in very high frequency (VHF) plasma enhanced chemical vapor deposition system for uniform deposition of silicon films. Two VHF powers introduced to each electrode produced parallel plasma bands, and their positions could be changed by manipulating the phase difference between the supplied VHF waves. Excitation frequency was 80MHz. The maximum plasma density using this plasma source was 1.5×1010/cm3 and the electron temperature was around 2eV with input power of 2.5kW, which were measured by double tip Langmuir probe. The uniformity of deposition rate under ±13% was achieved on 1m2 area with optimal plasma conditions.

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