Oxidation smoothing of sidewall roughness in AlGaAs heterostructure waveguides (original) (raw)

Oxidation smoothing of sidewall roughness in AlGaAs heterostructure waveguides

2005

Abstract

A 10-100 fold reduction in sidewall roughness of etched AlGaAs ridge structures is demonstrated using a wet thermal oxidation process modified through addition of <1% O2 to the N2 carrier gas, potentially enabling high index contrast waveguides with ultra-low scattering loss for ring resonator and other photonics device applications

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