Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors (original) (raw)

High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

Nanoscale research letters, 2013

Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared photodetectors based on a metal-semiconductor-metal (M-S-M) structure. The InSb nanowires were synthesized using an electrochemical method at room temperature. The characteristics of the FET reveal an electron concentration of 3.6 × 1017 cm-3 and an electron mobility of 215.25 cm2 V-1 s-1. The photodetectors exhibit good photoconductive performance, excellent stability, reproducibility, superior responsivity (8.4 × 104 A W-1), and quantum efficiency (1.96 × 106%). These superior properties are attributed to the high surface-to-volume ratio and single-crystal 1D nanostructure of photodetectors that significantly reduce the scattering, trapping, and the transit time between the electrodes during the transport process. Furthermore, the M-S-M structure can effectively enhance space charge effect by the formation of the Schottky contacts, which significantly assists with the electron injection and photocur...

Low leakage-current InAsSb nanowire photodetectors on silicon

Nano letters, 2015

Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cut-off of 2.3 μm at 300 K. This record low leakage current density for InAsSb devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.

Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics

Nanotechnology, 2017

InAsSb nanowires (NWs) with a high Sb content have potential in the fabrication of advanced silicon-based optoelectronics such as infrared photondetectors/emitters and highly sensitive phototransistors, as well as in the generation of renewable electricity. However, producing optically efficient InAsSb NWs with a high Sb content remains a challenge, and optical emission is limited to 4.0 μm due to the quality of the nanowires. Here, we report, for the first time, the success of high-quality and optically efficient InAsSb NWs enabling silicon-based optoelectronics operating in entirely mid-wavelength infrared. Pure zinc-blende InAsSb NWs were realized with efficient photoluminescence emission. We obtained room-temperature photoluminescence emission in InAs NWs and successfully extended the emission wavelength in InAsSb NWs to 5.1 μm. The realization of this optically efficient InAsSb NW material paves the way to realizing next-generation devices, combining advances in III-V semicondu...

Engineering the Photoresponse of InAs Nanowires

ACS applied materials & interfaces, 2017

We report on individual-InAs nanowire optoelectronic devices which can be tailored to exhibit either negative or positive photoconductivity (NPC or PPC). The NPC photoresponse time and magnitude is found to be highly tunable by varying the nanowire diameter under controlled growth conditions. Using hysteresis characterization, we decouple the observed photoexcitation-induced hot electron trapping from conventional electric field-induced trapping to gain a fundamental insight into the interface trap states responsible for NPC. Furthermore, we demonstrate surface passivation without chemical etching which both enhances the field-effect mobility of the nanowires by approximately an order of magnitude and effectively eliminates the hot carrier trapping found to be responsible for NPC, thus restoring an "intrinsic" positive photoresponse. This opens pathways toward engineering semiconductor nanowires for novel optical-memory and photodetector applications.

Nanowire photodetectors with embedded quantum heterostructures for infrared detection

Infrared Physics & Technology, 2018

Nanowires offer remarkable opportunities for realizing new optoelectronic devices because of their unique fundamental properties. The ability to engineer nanowire heterostructures with large bandgap variations is particularly interesting for technologically important broadband photodetector applications. Here we report on infrared photodetectors based on arrays of InP nanowires with embedded InAsP quantum discs. We demonstrate a strongly reduced dark current in the detector elements by compensating the unintentional ndoping in the nominal intrinsic region of the InP nanowires by in-situ doping with Zn, a crucial step towards realizing high-performance devices. The optimized array detectors show a broad spectral sensitivity at normal incidence for wavelengths from visible to far-infrared up to 20 m, promoted by both interband and intersubband transitions. Optical simulations show that the unexpected normal incidence response at long wavelengths is due to non-zero longitudinal modes hosted by the nanowires.

Growth of InAs/InAsSb heterostructured nanowires

Nanotechnology, 2012

We report the growth of InAs/InAs(1-x)Sb(x) single and double heterostructured nanowires by Au-assisted chemical beam epitaxy. The InAs(1-x)Sb(x) nanowire segments have been characterized in a wide range of antimony compositions. Significant lateral growth is observed at intermediate compositions (x ∼ 0.5), and the nucleation and step-flow mechanism leading to this lateral growth has been identified and described. Additionally, CuPt ordering of the alloy has been observed with high resolution transmission electron microscopy, and it is correlated to the lateral growth process. We also show that it is possible to regrow InAs above the InAsSb alloy segment, at least up to an intermediate antimony composition. Such double heterostructures might find applications both as mid-infrared detectors and as building blocks of electronic devices taking advantage of the outstanding electronic and thermal properties of antimonide compound semiconductors.

Design and fabrication of InN nanowire photodiode detectors for SWIR

2013

Cameras have, at their heart, photo detectors. The latter are made of materials that are sensitive to a specific wavelength band, such as visible, UV, short wave infrared (SWIR), etc. The efficiency of detecting incoming photons and convert them into information to perform imagery is a constant challenge and command to search for new materials to be used as detectors. Among these, InN nanowires were presented by McGill University as promising because InN can respond to a much wider wavelength range than conventional material such as InGaAs. Moreover, InN nanowires are grown directly on Si substrates and can be readily integrated with Si electronics on the same chip, which would reduce the integration cost by a factor of three to five.