Ion beam synthesis of Mn/Sb clusters in silicon (original) (raw)

Journal of Physics D: Applied Physics, 2008

Abstract

In order to investigate the formation of Mn/Sb clusters embedded in crystalline silicon, sequential ion implantation with fluences of 1 × 1016 at cm-2 and 2 × 1016 at cm-2, respectively, was used to incorporate Mn and Sb ions at high concentrations into Si(0 0 1). Based on investigations with Rutherford backscattering spectroscopy (RBS) and corresponding channelling measurements (RBS/c), we

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