Experimental Study of Microhardness and Fracture of Implanted Gállium Nitride Films (original) (raw)

Fracture of Nano and Engineering Materials and Structures

Abstract

The investigation of radiation effects in III–V semiconductors is of current interest because of the potential application of ion implantation in the production of electronic and photonic devices. Of the plethora of III–V semiconductors, gallium nitride (GaN) has attracted keen interest, during past decade, as wide gap semiconductor for numerous applications, including high-power or high frequency devices and high-power switches. Although there is considerable interest in determining the influence of ion implantation on the mechanical properties of GaN films, the matter has received only scant attention, see for example Kavouras et al. [1]. Indeed, studies of the processes controlling hardness, contact damage and cracking of epitaxially grown GaN films have significant technological importance.

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