A Review on Laser Processing in Electronic and MEMS Packaging (original) (raw)
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The packaging of Micro-Electro-Mechanical Systems (MEMS) is a field of great importance to anyone using or manufacturing sensors, consumer products, or military applications. Currently much work has been done in the design and fabrication of MEMS devices but insufficient research and few publications have been completed on the packaging of these devices. This is despite the fact that packaging is a very large percentage of the total cost of MEMS devices. The main difference between IC packaging and MEMS packaging is that MEMS packaging is almost always application specific and greatly affected by its envirotient and packaging techniques such as die handling, die attach processes, and lid sealing. Many of these aspects are directly related to the materials used in the packaging processes. MEMS devices that are functional in wafer form can be rendered inoperable after packaging. MEMS dies must be handled only from the chip sides so features on the top surface are not damaged. This eliminates most current die pick-and-place fixtures. Die attach materials are key to MEMS packaging. Using hard die attach solders can create high stresses in the MEMS devices, which can affect their operation greatly. Lowstress epoxies can be high-outgassing, which can also affect device performance. Also, a low modulus die attach can allow the die to move during ultrasonic wirebonding resulting to low wirebond strength. Another source of residual stress is the lid sealing process. Most MEMS based sensors and devices require a hermetically sealed package. This can be done by pm~el seam welding the package lid, but at the cost of further induced stress on the die. Another issue of MEMS packaging is the media compatibility of the packaged device. MEMS unlike ICS often interface with their environment, which could be high pressure or corrosive. The main conclusion we can DISCLAIMER Portions of this document may be illegible in electronic image products. Images are produced from the best available original document. , , draw about MEMS packaging is that the package affects the performance and reliability of the MEMS devices. There is a gross lack of understanding between the package materials, induced stress, and the device performance. The material properties of these packaging materials are not well defined or understood. Modeling of these materials and processes is far from maturity. Current post-package yields are too low for commercial feasibility, and consumer operating environment reliability and compatibility are often difficult to simulate. With fu~her understanding of the materials properties and behavior of the packaging materials, MEMS applications can be fully realized and integrated into countless commercial and military applications.
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Higher efficiency, power density, reliability and longer lifetime of power electronic devices would stem from progresses in material science. In this work, we propose to use a high performance thermoplastic polymer PAEK as packaging box to extend the operating temperature above 200°C. More, the laser transmission welding process has been applied to PAEK to join the two-part module. In order to validate this assembling process, the temperature distribution inside the specimens was measured during laser transmission welding. The assembly consists of a quasi-amorphous sample as the upper part and a semi-crystalline sample as the lower part. The temperature fields were measured by infrared thermography with the camera sensor perpendicular to the welded interface. With an energy beam of 28 J.mm-2 and irradiation time of 15 s, we have noticed that the maximum temperature inside the sample is kept far from the PAEK degradation one. Moreover, the temperature at the interface reaches the melting temperature thus assuring enough mobility for polymeric chains to get adhesion at the interface. The location and size of the heat-affected zone has been determined. Finally, some frames were machined and successfully welded.
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The process model involving the calculation of the laser melted region in which the dopant diffusion occurs has been developed. Experimental results are well described by the proposed modelIn this paper after reviewing the principle of our technique, we present the electronic characterization and the modeling these new microdevices and show that they present excellent current voltage linear behavior at usual microelectronics voltages. Furthermore, process modeling bases on the laser induced silicon melted region calculation is introduced and successfully compared to experimental results. The laser trimming applications for microelectronisc special components will confirm wide applications range of this new technology