Morphological, A.C. conductivity and dielectric properties of LiCoO2 cathode films grown by RF magnetron sputtering (original) (raw)

Layered LiCoO2 (LCO) cathode thin films were deposited on Ti/silicon (Si) (100) substrate at ambient temperature by RF magnetron sputtering. All the prepared thin films were annealed at 400, 500 and 600 C under oxygen atmosphere to enhance the crystallinity. X-ray diffraction pattern of the LCO thin film annealed at 600 C showed the formation of pure rhombohedral phase. AFM micrographs of LCO thin films reveal the surface morphology and roughness modifications parameters. Impedance measurements were made as a function temperature in the frequency range of 100 Hz to 10 MHz for all the prepared LCO thin films From the analysis of the Impedance, ac conductivity and dielectric constant (ε′) for the as-deposited and post-annealed LCO thin films were evaluated as a function temperature in the frequency range of 100 Hz to 10 MHz.