Kalman filtering based on the maximum correntropy criterion in the presence of non-Gaussian noise (original) (raw)

IEEE Transactions on Device and Materials Reliability, 2016

Abstract

Power devices have to withstand fast thermal cycling in automotive applications. In order to guarantee reliability in these applications, a detailed understanding of the degradation mechanisms is required. One of these mechanisms is interlayer dielectric cracking, caused by the progressive plastic deformation of metal lines. In a previous publication, we have shown that DMOS transistors, with different active areas, which operate in similar conditions, have dissimilar reliabilities. This cannot be explained by state-of-the-art methods, which estimate reliability from the peak junction temperature. In this paper, extended measurement results of a DMOS transistor will be analyzed with the aid of electrothermal and thermomechanical simulations, and a new approach for reliability estimation will be proposed.

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