A 10-W S-band class-B GaN amplifier with a dynamic gate bias circuit for linearity enhancement (original) (raw)
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High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology
IEEE Transactions on Microwave Theory and Techniques, 2003
A 36-dBm high-linearity single-ended commonsource class-B monolithic-microwave integrated-circuit power amplifier is reported in GaN high electron-mobility transistor technology. We also describe the design and simulation of highly linear and highly efficient common-source and common-drain class-B power amplifiers. Single-ended class-B amplifiers with bandpass filtering have equivalent efficiency and linearity to push-pull configurations. The common-source class-B circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power-added efficiency (PAE) of 34%. Simulations of common-drain class-B designs predict a PAE of 54% with a superior IM3 suppression of more than 45 dBc over a wider range of bias due to the strong series-series negative feedback offered by the load resistance.
High-linearity class B power amplifiers in GaN HEMT technology
IEEE Microwave and Wireless Components Letters, 2000
A 36-dBm, high-linearity, single-ended Class B MMIC power amplifier is reported in GaN HEMT technology. The circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power added efficiency (PAE) of 34%. We demonstrate experimentally that Class B power amplifiers can achieve IM3 suppression comparable to Class A, while providing approximately 10% improved power added efficiency.
Development of a GaN HEMT class-AB power amplifier for an envelope tracking system at 2.45 GHz
2010
A class-AB power amplifier was designed for an envelope tracking (ET) application. Class-AB amplifier is widely used in wireless communication systems due to the compromise between linearity and efficiency. As a power device, Cree Gallium Nitride High Electron Mobility Transistor (GaN HEMT) CGH4010F was chosen. The input and output matching networks were designed and simulated with Advanced Design System (ADS). After some optimization, the amplifier was fabricated using a Rogers RT/Duroid 5880 substrate. The amplifier together with a MAX2247 preamplifier as a driver was measured. A good agreement between the simulation and measurement results was observed. The maximum power added efficiency (PAE) is around 50 percents with the supply voltage Vsup= 10V and the maximum drain efficiency is around 75 percents with Vsup= 5V. An output power up to 42 dBm and good linearity of the output voltage with respect to the supply voltage in the range 0≪Vsup≪20V were achieved. Thus, the amplifier i...
A GaN HEMT power amplifier with variable gate bias for envelope and phase signals
Norchip 2007, 2007
This paper describes the design, simulation and measurement of a GaN power amplifier suitable for envelope and phase signal combination. The low-frequency envelope signal is used to vary the gate (bias) voltage of the device, resulting in a pulse width modulated drain voltage, while modulation of supply voltage or current is avoided. The test circuit is implemented using a discrete GaN HEMT power amplifier and discrete surface-mount passive components assembled on a PCB. Measurements showed a maximum drain efficiency of 59% at 360 MHz, at an output power of 29 dBm. The output power as a function of the gate bias voltage varied between 3 and 29 dBm, with the drain efficiency varying between 6 and 59%.
A band selecting UHF class-AB GaN power amplifier with 40 dBm output power
2013
A BAND SELECTING UHF CLASS-AB GaN POWER AMPLIFIER WITH 40 dBm OUTPUT POWER Sinan Alemdar M.S. in Electrical and Electronics Engineering Supervisor: Prof. Dr. Abdullah Atalar July, 2013 Ultra High Frequency (UHF) band is used for GSM communication, satellite systems, television broadcast, frequency hopping radios, software defined radios using advanced digital modulations. Each and every application would require various specifications and these modern applications require various frequency bands. In this work, a band selecting uhf class-ab GaN power amplifier with 40 dBm output power is built using a GaN-HEMT transistors and PIN diodes. The power amplifier can be tuned in 1350MHz–2700MHz one-octave frqeuency band, has a maximum gain of 17dB, and a maximum saturated output power of 41 dBm.
IET Microwaves, Antennas & Propagation, 2009
An enhanced architecture for the design of current-mode class-D (CMCD) power amplifiers (PAs) at microwave frequencies is presented. In the proposed structure, the harmonic impedance loading conditions of CMCD amplifiers are realised by using multiharmonic output impedance transformation networks instead of a combination of balun and lumped element tanks, typically used in CMCD PA designs. The advantage of the proposed approach is to remove design complexity from the balun and lumped element tank. A 39 dBm GaNbased CMCD PA was designed at 2.35 GHz -to the best knowledge of the authors the highest frequency for a CMCD PA reported in open literature -to validate and to demonstrate the capabilities of this architecture. The fabricated PA achieves 68% DC-to-RF efficiency (h) and 65% power added efficiency. A comparison between this S-band amplifier and a conventional wideband-balun-resonant-tank CMCD PA at 1 GHz using a similar commercial active device demonstrates the frequency coverage and performance improvement of the proposed topology.
High gain over an octave bandwidth class-F RF power amplifier design using 10W GaN HEM
Bulletin of Electrical Engineering and Informatics
The wireless communication industry grows faster each day. In terms of RF power amplifier (RFPA), the requirements on efficiency, linearity, bandwidth, output power and cost are getting more stringent. RFPA is considered as the most important component because of consuming large power in a base station. In this paper, a systematic approach is used to design a high flat gain class-F RFPA over an octave bandwidth. The simulation of a 1.5GHz class-F power amplifier mode demonstrates a high drain efficiency while accomplishing a high flat gain over a wide bandwidth. To identify the optimum impedance for the output matching and input matching network, the load-pull and source-pull are performed. The simulation results show that the RFPA can deliver a drain efficiency of 68.37 % at the output power of 40.79 dBm with power added efficiency of 66.94 %. The designed PA achieved a high gain between 13 dB to 17 dB from 0.5 GHz to 2.0 GHz of a frequency band. The matching circuits are realized ...
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2010
Switch mode power amplifiers offer high efficiency approaching 100% for an ideal case. This paper discusses the operation mode of broadband switch mode class-E power amplifier designed previously by the authors for UHF applications (600 - 1000 MHz). A method to extract the waveforms at the die reference plane from the time domain analysis using 50 Ω environment system is discussed. It has been observed that the designed class-E power amplifier operation was not maintained ideally over the entire band, however, it was operating close to the class-E operation.