Analytical Modelling of GNRFET on MATLAB (original) (raw)

2019, International journal of engineering research and technology

Abstract

In recent years, graphene has shown huge promise as material that can swap silicon-based materials in the future due to its outstanding electrical properties and other characteristics. MOSFETs have disadvantages with shorter channels causing short channel effects but Graphene has many uncommon properties. It is the strongest material ever tested, conducts heat and electricity efficiently, high mobility at room temperature, low atomic thickness, large current density, and is nearly transparent, Graphene shows a large and nonlinear diamagnetism. Graphene is an allotrope form of carbon consisting of a single layer of carbon atoms arranged in a hexagonal lattice. It is a semimetal with small overlap between the valence and the conduction bands and overall with reduced short channel effects. In this project, we propose the analytical modelling and simulation of Graphene Nanoribbon field effect transistor with armchair chirality of GNRs for semiconducting behaviour in which, we model Drain current v/s Drain voltage, Drain current v/s Gate voltage, Current density with varying channel lengths, Transconductance, Ion/Ioff ratio, Channel surface potential and Density of States using self-consistent solution of 2D Poisson equation. This project covers the studies and modelling of Graphene Nanoribbon, which includes currentvoltage graphical plots using MATLAB.

Loading...

Loading Preview

Sorry, preview is currently unavailable. You can download the paper by clicking the button above.

References (7)

  1. Huei Chaeng Chin Cheng Lim,Weng Wong,Vijay Arora, "Enhanced Device and Circuit -Level performance Benchmarking of Graphene Nanoribbon FET against a Nano-MOSFET with Interconnects" Hindawi Publishing Corporation,Journal of Nanomaterials,Volume 2014, Article ID 879813, 14 pages
  2. http://dx.doi.org/10.1155/2014/879813
  3. Anisur Rahman,Jing Guo,Supriyo Datta,Fellow,IEEE, and Mark S.Lundstrom,Fellow,IEEE, "Theory of Ballistic Nanotransistors",IEEE Transactions on Elecronic Devices,Vol.50,No.9,September 2003
  4. M.Akbari Eshkalak, "Graphene Nano-Ribbon Field Effect Transistor under Different Ambient Temperatures", Iranian Journal of Electrical and Electonic Engineering,Vol.12,No.2,June 2016
  5. Mohmmadi Banadaki,Yaser,"Physical Modelling of Graphene Nanoribbon Field Effect Transitor Using Non-Equilibrium Green Function Approach for Integrated Circuit Design"(2016).LSU Doctoral Dissertations. 1052.
  6. Supriyo Datta,"Quantum Transport Atom to Transistor", Cambridge University Press, The Edinburgh Building, Cambridge , New York, ISBN 978-0-511-11322-2, 2005
  7. Ying-Yu Chen , Artem Rogachev , Amit Sangai , Giuseppe Iannaccone , Gianluca Fiori and Deming Chen, "A SPICE-Compatible Model of Graphene Nano-Ribbon Field-Effect Transistors Enabling Circuit-Level Delay and Power Analysis Under Process Variation", IEEE TRANSACTION, Italy, ISBN 978-3-9815370, 2013. III. CONCLUSION A model for the Graphene Nanoribbon FET using Self Consistent Solution is analysed on MATLAB.The various characteristics have been plotted and they match with the International Journal of Engineering Research & Technology (IJERT) ISSN: 2278-0181