New silicon technologies enable high-performance arrays of single photon avalanche diodes (original) (raw)
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IEEE Journal of Selected Topics in Quantum Electronics, 2014
We present a new silicon integrated-passive-quenched single-photon avalanche diode, fabricated at FBK. Unlike common SPADs, they feature the quenching resistor lithographically fabricated close to the detector and they also have a special topmetallization layout which allows a better signal extraction. We characterized the performance of devices with different active area, layout and junction technology, particularly focusing on the timing jitter. We studied the effect of the metallization layout on timing jitter, the differences between two types of technologies and we also compared measurements performed with blue light and nearinfrared light. These devices showed a remarkable timing jitter, close to 20 ps full-width at half-maximum.
Resonant-Cavity-Enhanced Single-Photon Avalanche Diodes on Reflecting Silicon Substrates
IEEE Photonics Technology Letters, 2008
In this letter, we report the first resonant-cavity-enhanced single-photon avalanche diode (RCE SPAD) fabricated on a reflecting silicon-on-insulator (SOI) substrate. The substrate incorporates a two-period distributed Bragg reflector fabricated using a commercially available double-SOI process. The RCE SPAD detectors have peak photon detection efficiencies ranging from 42% at 780 nm to 34% at 850 nm and time resolution of 35-ps full-width at half-maximum. Typical dark count rates of 450, 3500, and 100 000 c/s were measured at room temperature with RCE SPADs having, respectively 8-, 20-, and 50-m diameter.
A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology
Optics express, 2012
We present a single-photon avalanche diode (SPAD) with a wide spectral range fabricated in an advanced 180 nm CMOS process. The realized SPAD achieves 20 % photon detection probability (PDP) for wavelengths ranging from 440 nm to 820 nm at an excess bias of 4 V, with 30 % PDP at wavelengths from 520 nm to 720 nm. Dark count rates (DCR) are at most 5 kHz, which is 30 Hz/μm2, at an excess bias of 4V when we measure 10 μm diameter active area structure. Afterpulsing probability, timing jitter, and temperature effects on DCR are also presented.
SPADA: single-photon avalanche diode arrays
IEEE Photonics Technology Letters, 2005
We present a silicon monolithic array of 60 photon counters (single-photon avalanche diode array) for two-dimensional imaging, with detection efficiency higher than 30% in the visible range. The fabricated solid-state array is rugged and easy to be integrated in the optical system. It is free from readout noise and provides very fast frame rates and nanosecond gating. The detection electronics includes integrated active quenching circuits for each pixel of the array. We report the optical and electrical characterization of both array detectors and associated electronics.
IEEE Journal of Selected Topics in Quantum Electronics
We present the world's first backside-illuminated (BSI) single-photon avalanche diode (SPAD) based on standard silicon-on-insulator (SOI) CMOS technology. This SPAD achieves a good dark count rate (DCR) after backside etching, comparable to DCRs of BSI SPADs fabricated on bulk wafers. Unlike bulk-wafer-based BSI SPADs, which typically suffer from poor violet and blue sensitivity, the proposed BSI SPAD features increased near-ultraviolet sensitivity as well as significant sensitivity in the violet and blue spectral ranges, thanks to the ultrathin-body SOI. To the best of our knowledge, this is the best result ever reported for any BSI SPAD in standard CMOS technology. In addition, it also shows high sensitivity at long wavelengths thanks to the interface between silicon and silicon-dioxide layers. Therefore, it achieves a photon detection probability over 26 % at 500 nm and 10 % in the 400-875 nm wavelength range at 3 V excess bias voltage. The timing jitter is 119 ps full width at half maximum at the same operation condition at 637 nm wavelength. For the proposed BSI SPAD, the buried oxide layer in SOI wafers is used as an etching stop during the wafer backside-etching process, and therefore it ensures the excellent performance uniformity in large arrays.
Advantages of gated silicon single-photon detectors
Applied Optics, 2012
We present a gated silicon single photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon detection efficiency of 45±5% at 808 nm with 2·10 −6 dark count per ns at -30V of excess bias and -30 • C. We compare gated and free-running detectors and show that this mode of operation has significant advantages in two representative experimental scenarios: detecting a single photon either hidden in faint continuous light or after a strong pulse. We also explore, at different temperatures and incident light intensities, the "charge persistence" effect, whereby a detector clicks some time after having been illuminated.
Journal of Lightwave Technology, 2013
We characterize a new commercial, backilluminated reach-through silicon single-photon avalanche photo diode (SPAD) SAP500 (Laser Components. Inc.), operated in Geiger-mode for purpose of photon counting. We show that for this sensor a significant interplay exists between dark counts, detection efficiency, afterpulsing, excess voltage and operating temperature, sometimes requiring a careful optimization tailored for a specific application. We find that a large flat plateau of sensitive area of about 0.5 mm in diameter, a peak quantum efficiency of 73% at 560 nm and timing precision down to 150 ps FWHM are the main distinguishing characteristics of this SPAD.
Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS Technology
IEEE Transactions on Electron Devices, 2000
ABSTRACT Single-photon avalanche photodiodes (SPADs) operating in Geiger mode offer exceptional time resolution and optical sensitivity. Implementation in modern nanometer-scale complementary metal-oxide-semiconductor (CMOS) technologies to create dense high-resolution arrays requires a device structure that is scaleable down to a few micrometers. A family of three SPAD structures with sub-100-Hz mean dark count rate (DCR) is proposed in 130-nm CMOS image sensor technology. Based on a novel retrograde buried n-well guard ring, these detectors are shown to readily scale from 32 to 2 μm with improving DCR, jitter, and yield. One of these detectors is compatible with standard triple-well digital CMOS, and the others bring the first low-DCR realizations at the 130-nm node of shallow-trench-isolation-bounded and enhancement SPADs.
All-Silicon 1.55-μm High-Resolution Photon Counting and Timing
IEEE Photonics Technology Letters, 2000
We investigate the performances at 1.55-m wavelength of silicon single photon avalanche diodes (SPADs), demonstrating their suitable applicability in laser characterizations and ultra-sensitive autocorrelation measurements. We investigate the photon detection efficiency and the two-photon absorption process of both lightly doped thick SPADs and heavily doped thin SPADs. Finally, we report the accurate pulse-shape characterization of a 1.55m pulsed laser by means of a thin silicon SPAD that exploits the best intrinsic time resolution of 25 ps with wide dynamic range and low measurement time.
A wide spectral range Single-Photon Avalanche Diode implemented in 65nm standard CMOS Technology
Modares Journal of Electrical Engineering, 2013
This paper presents a wide spectral range Single-Photon Avalanche Diode (SPAD) implemented in 65nm standard CMOS (Complementary Metal Oxide Semiconductor) Technology. The wide wavelength sensitivity is achieved using the p-type substrate layer instead of using a different well implanted inside the substrate. The higher electron impact ionization coefficient in compare with the hole impact ionization coefficient results in an increase in the photon detection probability (PDP) in the larger wavelengths. Low PDP in compare with the older technologies is predictable according to the higher doping profiles of the modern deep-submicron technologies. Both the optical emission from the active region and spectral response detection is measured and analyzed in this paper.