INVESTIGATION OF THE EFFECT OF TEMPERATURE ON THE DRAIN CURRENT OF A 10NM DOUBLE GATE (DG) MOSFET (original) (raw)

In this work, the effect of temperature on the drain current of a 10nm DG MOSFET is investigated for Elemental and Binary Compound semiconductors as channel materials. The semi-classical transport model is used to analysethe effect of temperature covering a range of low, average, and high temperatures (50K, 250K, 350K, 450K, 650K and 850K) using NanoMOS software. It was found that Si and Ge semiconductor channel offer high resistance at low temperature with high electron density and average electron velocity causing a rapid increase in drain current through the channel as the gate voltage increase above and very Low resistance at the range of room temperature (250K to 350K). At low temperature for the semiconductor channel the drain current increases with decrease in average electron velocity due to the suppression in the barrier potential at low temperature. At high temperatures (250K, 350K, 450K, 650K and 850K the drain current in the channel increase with increase in temperature due to the decrease in resistance. The results obtained show the the binary compound semiconductor channels have higher onstate current compared to the elemental semiconductors due to better mobility of electrons and holes which is in agreement with reports in the literature. This indicate that compound semiconductors are more suitable for designing Digital or Analogue System using DG MOSFET below the 10nm region.