Electrical Characteristics and Alpha Particle Detection Performance of a Newly Developed Pin Photodiode (original) (raw)
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Radon measurements with a PIN photodiode
Applied Radiation and Isotopes, 2006
Silicon photodiodes are well suited to detect alphas coming from different sources as neutron reactions or radon daughters. In this work a radon in air detecting device, using an 18 Â 18 mm silicon PIN photodiode is studied. The ionized airborne decay products formed during radon diffusion were focused by an accelerating high voltage to the PIN surface. Several conducting rings were disposed inside a cylindrical PVC vessel in such a way that they reproduced the electric field created by a punctual charge located behind PIN position.
Characterization of a low-cost PIN photodiode for dosimetry in diagnostic radiology
Physica Medica, 2015
A commercial silicon PIN-photodiode was tested and characterized as ionizing radiation detector for radiological applications. A current-to-voltage amplification stage was designed and realized in order to acquire the photodiode signal in current mode. The system was tested with clinical beams routinely used for radiography and mammography. A Monte Carlo simulation of the detector was performed with the MCNPX code in order to model and fully understand, in particular, the impact of the sensor casing on the low energy response of the device. A reproducible output linearity was found over the dose range 0.03 e4.5 mGy of great clinical relevance. The system sensitivity was found to be stable at 0.2 V s Gy À1 for effective X-ray energies between 17 and 40 keV. The batch-to-batch reproducibility of the diodes was also experimentally investigated for two different batches of 14 diodes each. An inter-comparison with dosimeters routinely used in medical physics (i.e. Barracuda MPD RTI) showed a linear correlation between PIN-photodiode readout and absorbed dose measured with Barracuda, in the range of doses received by mammography and radiology patients.
Evaluation of a PIN Photodiode Detector in Neutron-Gamma Fields
2011
Semiconductor detectors are suitable for applications in radiation dosimetry in nuclear research reactors and for radiation protection purposes. The performance of these detectors depends on the quality of their semiconductor. The aim of this work was to evaluate a commercial PIN Photodiode in the neutron-gamma fields of the IEA-R1 nuclear research reactor and from an AmBe neutron source. This semiconductor was studied as a neutron detector using some types of converters to determine a dose-to-counts conversion factor to dose equivalent. The results have shown that this component may be implemented for assessing the neutron spectra in some radiation fields and in dose equivalent in radiation protection routines.
Fabrication and characterization of Si-PIN photodiodes
TURKISH JOURNAL OF PHYSICS, 2019
In this work, characteristics of silicon-based p + type, intrinsic (I), n − type (Si-PIN) photodiodes with active area of 3.5 × 3.5 mm 2 , 5.0 × 5.0 mm 2 , or 7.0 × 7.0 mm 2 and their possible usage in optoelectronics were studied. The devices were fabricated in the Radiation Detector Application and Research Center (NÜRDAM) of Bolu Abant İzzet Baysal University, Turkey. To acquire the device specifications, the current-voltage (I-V) and the capacitance-voltage (C-V) measurements were carried out in the photoconductive mode. Quantum efficiency and spectral responsivity measurements were performed in the photovoltaic mode. Both measurements were carried out in a dark environment at room temperature. The measured values of the dark current (I dc) and the capacitance of photodiodes were-6.97 to-19.10 nA and 23 to 61 pF at-5 V, respectively. The quantum efficiency measurements of the devices increased up to 66%. P responsivity was found to be 0.436 ± 1 mA/W at 820 nm. The results indicate that the I dc current and the performance of the devices were improved. Therefore, the devices can be utilized for optoelectronics applications and commercial usage.
Scanning of irradiated silicon detectors using alpha particles and low-energy protons
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999
In a spectroscopic study of non-irradiated and proton-irradiated silicon diodes, the detectors were illuminated from the front side and from the rear side by various alpha particle sources (mainly ThC') and by monoenergetic protons with energies from 1.0 to 2.5 MeV. Their response characteristics have been studied as a function of the incoming particle energy and the applied bias voltage. The charge collection eciency was determined as a function of uence.
Silicon Diode as an Alpha Particle Detector and Spectrometer for Direct Field Measurements
Radiation Protection Dosimetry, 2016
A miniature windowless silicon (Si) diode (4 mm 2) was evaluated as alpha particle detector and spectrometer for field measurements. Such detector would be useful in radiation surveys following nuclear or radiological events that involve contaminated individuals and surfaces with alpha-emitting radionuclides. The detector was irradiated with alpha particles from a 241 Am (2.3 kBq) and a 210 Po (9 kBq) source at source-detector distances (SDD) of 0.5, 1.0, and 1.8 cm. Measurements obtained under normal air pressure and temperature showed that the Si diode is useful for energy-resolved measurements of alpha particles under these conditions. For the Si diode, the energy resolution in terms of full width at half maximum (FWHM) was 281 keV, 148 keV, and 113 keV for the SSD of 0.5, 1.0, and 1.8 cm, respectively. The minimum detectable activity increased from 0.08 Bq to 0.83 Bq when the SDD increased from 0.5 to 1.8 cm for the Si diode.
2004
We report on bipolar NPN phototransistors fabricated at ITC-IRST on thick high-resistivity silicon substrates. The phototransistor emitter is composed of a phosphorus n+ implant, the base is a diffused high-energy boron implant, and the collector is the 600-800 mm thick silicon bulk, contacted on the backplane. We have studied the current amplification for two different doping profiles of the emitter, obtaining values of b ranging from 60 to 3000. For various emitter and base configurations, we measured the static device characteristics and extracted the leakage currents and the base resistance, verifying the fundamental relationship between them and the total base capacitances. The use of such phototransistors to detect ionizing particles is exploited and discussed. r 2004 Published by Elsevier B.V.
Comparison of Nür-Pin Photodiode and BPW34 Pin Photodiode
2020
The Silicon PIN photodiode (NÜR-PIN) with active area (3.5. x 3.5. mm2) was designed and fabricated on (100) N-type floating zone silicon substrates by using conventional photolithography process at Nuclear Radiation Detectors Applications and Research Center (NÜRDAM). To get NÜR-PIN and BPW34 specifications, capacitancevoltage (C-V) and current – voltage (I-V) measurements were accomplished at room temperature by using Keithley 4200-SCS and results were compared. The leakage current and capacitance at -10V are 20 nA and 17.7 pF for NÜRPIN, 32 nA and 27 pF for BPW34. Even if NÜR-PIN has good results at low reverse voltage, it is unstable at high reverse voltage compared to BPW34 photodiodes.
Characterization and Calibration of Ion-Implanted-Silicon Detector for Alpha Particles Measurement
2010
Ion implanted - silicon detectors are widely used in the alpha radiation, especially for quantitative analysis in environmental applications. For quantitative measurements of the alpha radiation, their characterization and electronic calibration is required. We have tested the silicon detector and CSA (Charge sensitive amplifier) at the room temperature with test setup, using a Am-241 source with a characteristic energy of 5.485 MeV. The purpose of these experiments was to calibrate and characterize the response of the radon system to charged particle of the same types and energies as those encountered in soil. To meet these requirements, discriminating with pulse width of 400 ns is adjusted. The experimental count results demonstrated that this system can be used in online radon measurements.
The performance of low-cost commercial photodiodes for charged particle and X-ray spectrometry
Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment, 1996
The energy response of a low-cost commercial silicon photodiodes detectors for alpha particles, fission fragments, internal conversion electrons and X-rays was studied. An alpha energy resolution of 16.7 keV (FWHM) was obtained for 5.486 MeV a-particles from 24'Am which is comparable in performance with the best surface barrier detectors available, that are considerably more expensive.