Electrical Characteristics and Alpha Particle Detection Performance of a Newly Developed Pin Photodiode (original) (raw)

The Silicon PIN photodiodes (Si-PIN) with an active area of 5.0 x 5.0 mm 2 were designed and fabricated by using a conventional photolithography process at the Center of Nuclear Radiation Detectors Research and Application (NÜRDAM) for the investigation of electrical characteristics and alpha particle detection performance. To obtain the device electrical specifications, the current-voltage (I-V) and the capacitance-voltage (C-V) measurements were carried out in the photoconductive mode. The Si-PIN photodiode was then used to detect alpha particles from different radioactive sources in a vacuum at room temperature. Photodiode dark current and capacitance were measured and found to be-20 nA and 23pF, respectively, at-20 Volts (the operating voltage used during alpha particle detection). The possibilities of improving the parameters of the photodiode are discussed.