Tuning the lasing frequency and reducing the laser Linewidth of GaAs Semiconductor Laser Using External Oscillating Driving Field (original) (raw)

2006

Abstract

In this paper, we propose a new method to tune intrinsic GaAs semiconductor laser lasing frequency and reducing the laser linewidth using an external deriving field. We used the developed Floquet S-matrix which determines the transmission probabilities and the shape and position of the induced quasibound state, which accumulated incident electrons. We solve the S-matrix numerically to the system parameters. We found that the oscillating field amplitude 1 V plays a curial rule in defining the profile of electrons accumulations in the quasibound state, and the field's strength made shift the position of the quasibound state. This shift in the bound state energy due field's strength is used to tune the lasing frequency and the output of the semiconductor laser linewidth is improved by changing the field's amplitude the deriving field.

Hassan Ashour hasn't uploaded this paper.

Let Hassan know you want this paper to be uploaded.

Ask for this paper to be uploaded.