Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform (original) (raw)

Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform

2007

Abstract

Tensile-strained Ge photodetector is realized on Si-substrate using novel SiSiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4 nA), responsivity (190 mA/W) and high speed (5 GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET showing 2X Si hole mobility.

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