Differential Body-Factor Technique for Characterization of Interface Traps in MOSFETs (original) (raw)

IEEE Electron Device Letters, 2011

Abstract

ABSTRACT A differential body-factor technique (DBT) is proposed for characterization of interface traps in MOSFETs employing the differential body factor dm / dV GS instead of the subthreshold slope or the body factor itself. The DBT is independent of the threshold voltage variation and advantageous to apply to MOSFETs with strong nonlinearity in the subthreshold slope caused by a nonuniform distribution of traps over the band gap. We applied the DBT to n- and p-MOSFETs with W / L = 5/0.13, 5/0.18, and 2/0.13μm/μm on the same wafer and obtained identical results. Extracted interface trap density ranges D it = 1010-1011 cm-2eV-1 with a U-shaped distribution over the band gap.

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