ITO substrate resistivity effect on the properties of CuInSe2 deposited using two-electrode system (original) (raw)

Journal of Materials Science, 2009

Abstract

The purpose of this work is to deposit the CuInSe2 films on the ITO substrate by electrodeposition technique using a simplified two electrodes system and to investigate the effect of ITO sheet resistance on the fundamental properties of the resulting films. The as deposited films were annealed under argon atmosphere at 300 °C during 30 min. The structural, morphological and electrical properties

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