Subject: 2. Crystalline Silicon Solar Cells and Material Technology Emitter Passivation Properties of PECVD Silicon Nitride on Silicon Solar Cells (original) (raw)

2008

Abstract

As industrially produced solar cells become thinner and more efficient, silicon nitride (SiN) films are becoming increasingly important. At present, the favored means of producing these films is by remote plasma-enhanced chemical vapour deposition (RPECVD). In this paper, using films produced by an industrial Roth & Rau SiNA RPECVD reactor, we investigate the surface passivation qualities of SiN films on phosphorus emitters. In industry, these SiN films are regularly subjected to anneals during metalisation. As such, we have endavoured to understand the effect that annealling has on the SiN films and seek to determine the most appropriate annealling conditions to optimise the surface passivation qualities of SiN on phosphorus emitters. Inital annealing results have shown an average 64 % increase in surface passivation across the range of refractive indices tested. In addition, a decrease in the standard deviation of the results indicates that annealing increases the uniformity of th...

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