Influence of the Zn plasma kinetics on the structural and optical properties of ZnO thin films grown by PLD (original) (raw)
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Optical Properties of Annealed ZnO Thin Films Fabricated by Pulsed Laser Deposition
Silicon, 2015
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JITL, 2021
The pulsed laser deposition is a practical synthesis route because of its unique advantages in growing various materials. Furthermore, the quality of thin films depends on different parameters in the deposition process. Meanwhile, ZnO has many applications in manufacturing optics, electronics, and optoelectronics instruments because of its exclusive properties. We have set up a PLD array to deposit the ZnO thin films on glass substrates. This study investigates the structural and optical characteristics of the films deposited at two different pulse repetition rates. Based on the optical-microscopic images and the scanning electron microscope (SEM) micrographs of films, increasing pulse repetition rate increases the uniformity of the particle size distribution and enhances film thickness. Also, the optical characterization performed by UV-Visible spectroscopy shows that the absorption and transmission rate, bandgap energy, and crystalline quality of the films can adjust by tuning the pulse repetition rate.
Structural and photoluminescence study of zinc oxide thin films grown by laser induced plasma
The structural, compositional and optical properties of thin films grown by laser-induced plasma (LIP) were studied as a function of post-deposition annealing. Nanocrystalline powder of ZnO was prepared through a wet chemical method using zinc acetate dihydrate (Zn(CH 3 COO) 2 .2H 2 O) and potassium hydroxide (KOH) as precursors. The X-ray diffraction (XRD) spectra showed the improved crystalline quality at elevated temperatures with a temperature-dependent variation in lattice parameters, pointing the activation of zinc and oxygen related point defects at various annealing temperatures. X-ray photoelectron spectroscopy (XPS) of Auger Zn L 3 M 4,5 M 4,5 and O 1s peaks revealed the reversion of zinc interstitials to crystal lattice as zinc lattice sites at different annealing temperatures leading to strong Zn-O bonding. The origins of near band edge (NBE) and deep level emission (DLE) in room temperature photoluminescence (PL) spectra, pointing out the activation of temperature-dependent intrinsic defects states are briefly discussed. Among all the thin films under investigation, ZnO thin films annealed at 700 °C were found to have strong Zn-O bonding with maximum contribution of oxygen interstitials that is favorable to form un-doped p-type ZnO essential for optoelectronic and spintronic devices.
Effect of Substrates on the Properties of ZnO Thin Films Grown by Pulsed Laser Deposition
Advances in Materials Physics and Chemistry, 2013
Polycrystalline zinc oxide (ZnO) thin films have been deposited at 450˚C onto glass and silicon substrates by pulsed laser deposition technique (PLD). The used source was a KrF excimer laser (248 nm, 25 ns, 5 Hz, 2 J/cm 2). The effects of glass and silicon substrates on structural and optical properties of ZnO films have been investigated. X-ray diffraction patterns showed that ZnO films are polycrystalline with a hexagonal wurtzite-type structure with a strong (103) orientation and have a good crystallinity on monocrystalline Si(100) substrate. The thickness and compositional depth profile were studied by Rutherford Backscattering spectrometry (RBS). The average transmittance of ZnO films deposited on glass substrate in the visible range is 70%.
Journal of Crystal Growth, 2007
In order to decrease the free-electron concentration and increase the crystalline quality, zinc oxide (ZnO) thin films were deposited on sapphire (0 0 0 1) substrates by oxygen plasma-assisted pulsed laser deposition (PLD). ZnO films showed higher oxygen composition, stronger diffraction intensity of the (0 0 0 2) direction, and larger grain size with regular hexagonal grain shape. The free-electron concentration was decreased greatly from 1019to10 19 to 1019to10 14 cm À3 and the Hall mobility was increased from 6.8 to 37 cm 2 V À1 s À1. Furthermore, the intensity of the resonant Raman scattering and ultraviolet photoluminescence emission was increased. This enhancement of the crystalline, electrical and optical quality would be attributed to the increase of high activity oxygen density introduced by the plasma oxygen source.
Structural and morphological properties of thin ZnO films grown by pulsed laser deposition
Applied Surface Science, 2008
Tungsten-doped zinc oxide thin films were prepared by ablating a target containing 1 wt% WO 3 with XeCl excimer laser (λ=3O8 nm). The films were grown onto different glass substrate at a repetition rate of 10Hz, pulse energy of 100 mJ and irradiation time of 20 min. The structural and optical properties of the films are found to be strongly dependent on the nature of the substrate. The X-ray Diffraction (XRD) results show that all the films are preferentially C-axis oriented. The room temperature photoluminescence (PL) spectrum shows a dominant nearband-edge emission peak for the film deposited on borosilicate and GGG substrate. The average transmittance was found to be in the range of 84-90%. The absorption coefficient exhibits a direct bandgap feature with some band tailing effects.
AIP Conference Proceedings, 2019
Highly oriented ZnO nanostructured thin films were prepared by pulsed laser deposition method. The X-ray diffraction patterns confirm the c-axis oriented growth of crystalline ZnO wurtzite structure. The samples were deposited on glass, quartz and silicon(001) substrates in order to compare the growth morphology and the ultraviolet (UV) photoresponse of these films. Scanning electron micrographs confirm the growth of nanostructured films with different surface morphologies. We report here a comparative study of current-voltage (I-V) characteristics and UV photo response of these nanostructured films.
Effects of laser irradiation on the structure and optical properties of ZnO thin films
The effects of laser irradiation on the surface microstructure and optical properties of ZnO films deposited on glass substrates were investigated experimentally and compared with those of thermal annealing. X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements showed that the irradiation treatment with an Ar + laser of 514 nm for 5 min improves the crystalline quality of ZnO thin films through increasing the grain size and enhancing the c-axis orientation, with the effects similar to those of the thermal annealing at 500°C for 1 h. Laser irradiation was found to be more effective both for the relaxation of the residual compressive stress in the as-grown films and for the modification of the surface morphology. A significant increase in the UV absorption and a widening in the optical band-gap of the films were also observed after laser irradiation.