De-embedding and modelling of pnp SiGe HBTs (original) (raw)
2007, 2007 European Microwave Integrated Circuit Conference
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Improvement of an SiGe HBT Structure by Changing the Germanium Profile
Australian Journal of Basic and …, 2011
Abstract: In this paper, the effect of Ge profile on the characteristics of an SiGe heterojunction bipolar transistor (HBT) is investigated. The serious problem of the HBT structure is the formation of parasitic barriers, due to the addition of germanium dopants to the base. ...
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