Effect on Electrical Properties of Gd-Doped BiFeO3–PbZrO3 (original) (raw)
2019, Iranian Journal of Science and Technology, Transactions A: Science
The (1 − x)(BiFe 1−y Gd y O 3)−x(PbZrO 3) [x = 0.5, y = 0.05, 0.10, 0.15, 0.20] were synthesized using a high-temperature solidstate reaction technique. X-ray analysis confirms the formation of the composites. The dielectric properties of the composites were studied. The hysteresis loop suggested that the materials were lossy. The impedance parameters were studied in a wide range of frequency (10 2-10 6 Hz) at different temperatures for all samples. The Nyquist plot suggested the contribution of bulk effect as well as grain boundary effect and the bulk resistance deceased with a rise in temperature for all the samples. The electrical transport confirmed the presence of hopping mechanism in the materials. The dc conductivity of the materials increased with a rise in temperature. The frequency variation of ac conductivity obeyed the Jonscher's universal power law and confirmed the small polaron (SP) tunneling effect due to low activation energy for all the samples. Temperature dependence of dc and ac conductivity indicated the thermally activated process of the materials.
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