Millimeter-wave bandwidth, SiGe-HBT travelling wave amplifier (original) (raw)

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084), 2000

Abstract

One Dimensional, three stage Travelling Wave amplifier structures have been designed and manufactured in Hitachi's 100-GHz SiGe-HBT technology. Measurements show that the circuits exhibit a bandwidth of about 67 GHz with 6 dB of gain. The circuit is operational at 3.3 V supply voltage consuming 23 mA current. The chip area is approximately 1×1 mm2

Yinggang Li hasn't uploaded this paper.

Let Yinggang know you want this paper to be uploaded.

Ask for this paper to be uploaded.