Controlled arsenic diffusion in epitaxial Cd x Hg 1− x Te layers in the evaporation–condensation–diffusion process (original) (raw)

Thin Solid Films, 2002

Abstract

The results of controlled doping of CdxHg1−xTe epitaxial layers are presented. The investigated layers were obtained by the evaporation–condensation–diffusion method in the process of isothermal growth. The process of auto diffusion from the solid phase was investigated. This process consists in the diffusion of As dopants from CdTe substrate into the grown epitaxial layer. Two types of CdTe substrates, uniformly

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