Cat-CVD-prepared oxygen-rich μc-Si:H for wide-bandgap material (original) (raw)

Thin Solid Films, 2005

Abstract

Microcrystalline phase-involved oxygen-rich a-Si:H (hydrogenated amorphous silicon) films have been obtained using catalytic chemical vapor deposition (Cat-CVD) process. Pure SiH4 (silane), H2 (hydrogen), and O2 (oxygen) gases were introduced in the chamber by maintaining a pressure of 0.1 Torr. A tungsten catalyzer was fixed at temperatures of 1750 and 1950 °C for film deposition on glass and crystalline silicon substrates

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