Luminescence tuning in GaN layers (original) (raw)

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Luminescence tuning in GaN layers

(ICEEE). 1st International Conference on Electrical and Electronics Engineering, 2004.

Arturo Escobosa

Abstract

GaN layers were grown at low pressure by nitridation of GaAs substrates. The films showed photoluminescence when excited with ultraviolet light. The luminescence color could be tuned by adjusting the growth parameters.

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